Abstract
Memory effects in n-type germanium heavily doped and strongly compensated by irradiation with slow and fast neutrons serving as a model of an amorphous semiconductor material are studied concerning the kinetics of the photoconductivity at 4. 2K.
| Original language | English |
|---|---|
| Pages (from-to) | 1947-1948 |
| Number of pages | 2 |
| Journal | Semiconductors |
| Volume | 6 |
| Issue number | 11 |
| State | Published - 1973 |