Modeling and simulations of MOSQWell transistor future building block for optical communication

Michael Bendayan; Avi Karsenty; Avraham Chelly

doi:10.1109/icsee.2016.7806052

Modeling and simulations of MOSQWell transistor future building block for optical communication

Michael Bendayan
, Avi Karsenty
, Avraham Chelly

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

RAFAEL Armament Development Authority Ltd.
Lev Academic Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

A new type of silicon MOSFET transistor, coupling both electronic and optical properties, is developed in order to overcome the indirect silicon bandgap constraint, and to serve as a future light emitting device in NIR [0.8-2μm] range, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such QW structure enables discrete energy levels for light emission. Model and simulations are presented.

Original language	English
Title of host publication	2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509021529
DOIs	https://doi.org/10.1109/icsee.2016.7806052
State	Published - 4 Jan 2017
Event	2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016 - Eilat, Israel Duration: 16 Nov 2016 → 18 Nov 2016

Publication series

Name	2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016

Conference

Conference	2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016
Country/Territory	Israel
City	Eilat
Period	16/11/16 → 18/11/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

Electroluminescence
SOI MOSFET
quantum well

Access to Document

10.1109/icsee.2016.7806052

Cite this

Bendayan, M., Karsenty, A., & Chelly, A. (2017). Modeling and simulations of MOSQWell transistor future building block for optical communication. In 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016 Article 7806052 (2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/icsee.2016.7806052

Bendayan, Michael ; Karsenty, Avi ; Chelly, Avraham. / Modeling and simulations of MOSQWell transistor future building block for optical communication. 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016. Institute of Electrical and Electronics Engineers Inc., 2017. (2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016).

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keywords = "Electroluminescence, SOI MOSFET, quantum well",

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doi = "10.1109/icsee.2016.7806052",

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Bendayan, M, Karsenty, A & Chelly, A 2017, Modeling and simulations of MOSQWell transistor future building block for optical communication. in 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016., 7806052, 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016, Eilat, Israel, 16/11/16. https://doi.org/10.1109/icsee.2016.7806052

Modeling and simulations of MOSQWell transistor future building block for optical communication. / Bendayan, Michael; Karsenty, Avi; Chelly, Avraham.
2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016. Institute of Electrical and Electronics Engineers Inc., 2017. 7806052 (2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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KW - Electroluminescence

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Bendayan M, Karsenty A, Chelly A. Modeling and simulations of MOSQWell transistor future building block for optical communication. In 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016. Institute of Electrical and Electronics Engineers Inc. 2017. 7806052. (2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016). doi: 10.1109/icsee.2016.7806052

Modeling and simulations of MOSQWell transistor future building block for optical communication

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Publication series

Conference

Bibliographical note

Keywords

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