Microstructural investigations of hafnium aluminum oxide films

  • Doina Craciun
  • , Gabriel Socol
  • , Emanuel Axente
  • , Aurelian Catalin Galca
  • , Rajiv Singh
  • , Valentin Craciun

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The crystalline structure, composition, chemical bonding and thermal stability of HfO2-Al2O3 mixtures deposited on Si using a combinatorial pulsed laser deposition technique were investigated. After deposition some films were annealed at temperatures from 850 to 950°C for 6 or 12 minutes. Grazing incidence x-ray diffraction investigations were performed to asses the crystallinity and thermal stability of the annealed layers. Measurements of the Al to Hf ratios were performed using energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy. From simulations of the x-ray reflectivity and spectroscopic ellipsometry spectra the phase composition and thickness of the films was calculated and then the Al to Hf ratios. Al/Hf values of 1 and 8 were found to be necessary to block the crystallization of the films after anneals at 850 and 950°C, respectively.

Original languageEnglish
Title of host publicationSynthesis and Metrology of Nanoscale Oxides and Thin Films
PublisherMaterials Research Society
Pages71-75
Number of pages5
ISBN (Print)9781605608556
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: 24 Mar 200828 Mar 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1074
ISSN (Print)0272-9172

Conference

Conference2008 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period24/03/0828/03/08

Fingerprint

Dive into the research topics of 'Microstructural investigations of hafnium aluminum oxide films'. Together they form a unique fingerprint.

Cite this