Metal-oxide semiconductor, field effect transistor-based microscale electro-optical multimode interference modulator on a silicon chip

Keyphrases

• Electro-optic 100%
• MOSFET 100%
• Multimode Interference 100%
• Silicon chip 100%
• Free Carriers 66%
• Transistor 33%
• Attenuation 33%
• Interference Region 33%
• Interferometer 33%
• Depletion Region 33%
• Applied Voltage 33%
• High Finesse 33%
• Amplitude Modulation 33%
• Operating Principle 33%
• Relative Phase Shift 33%
• Optical Modulator 33%
• Mode Conversion 33%
• Depletion Layer 33%
• Plasma Dispersion Effect 33%

Engineering

• Microscale 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Multimode 100%
• Realization 66%
• Relative Phase 33%
• Operation Principle 33%
• Depletion Layer 33%
• Applied Voltage 33%
• Depletion Region 33%
• Amplitude Modulation 33%
• Phase Shift 33%
• Interference Region 33%