This paper presents part of a multidimensional examination of mathematical giftedness. The present study examined the memory mechanisms associated with general giftedness (G) and excellence in mathematics (E) in four groups of 10th-12th grade students (16-18. years old) varying in levels of G and E. The participants first underwent the Raven test for general ability evaluation and SAT-M - the mathematical excellence tests in order to design the study groups. Afterwards, the students were tested on a battery of three memory tests including tests for short-term (STM) and working memory (WM). The results reveal that the G factor is related to high STM for both phonological loop and phonological central executive mechanisms. It was also found that the E factor is associated with high visual-spatial memory (VSM), in particular with the visual central executive mechanism. An interaction effect was found between G and E factors regarding WM. The central executive mechanism appeared to be related to both G and E factors. In addition, gender differences were shown within the groups. Male participants performed better than their female counterparts on a phonological storage task and a phonological central executive mechanism task. The results can contribute to the theoretical knowledge regarding similarities and differences in memory mechanisms in G and E groups.
Bibliographical noteFunding Information:
This project was made possible through the support of a grant from the John Templeton Foundation . The opinions expressed in this publication are those of the author(s) and do not necessarily reflect the views of the John Templeton Foundation. We are grateful to the University of Haifa for the generous support it has provided for this study.
- Excellence in mathematics
- General giftedness
- Memory capacity