Mechanism of particle deposition on silicon surface during dilute HF cleans

Zhan Chen, Rajiv K. Singh

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

The mechanism of particle deposition onto silicon wafer surfaces during dilute HF cleans is discussed. Direct surface force measurement using an atomic force microscope showed that particle redeposition on a silicon surface is due to the dominant van der Waals interaction between the particle and the wafer surface. The addition of surfactants can affect the clean effectiveness of a dilute HF solution by changing the surface interaction forces between a particle and a wafer. We show that there is a simple correlation between particle deposition and the product of the zeta-potentials of the wafer and particle. This correlation can be explained by introducing the linear superposition approximation to the derivation of electrical double-layer interactions. The addition of surfactant will also decrease dispersion attraction, introduce steric repulsion, and eliminate adhesion force, as indicated by the results of surface force measurements.

Original languageEnglish
Pages (from-to)G667-G672
JournalJournal of the Electrochemical Society
Volume150
Issue number11
DOIs
StatePublished - Nov 2003
Externally publishedYes

Fingerprint

Dive into the research topics of 'Mechanism of particle deposition on silicon surface during dilute HF cleans'. Together they form a unique fingerprint.

Cite this