The structural, optical, magnetic, and electrical properties of Co2CrAl Heusler alloy magnetic thin films grown on n-type silicon (100) substrate (n-Si) and glass substrate were studied. The films were deposited using DC magnetron sputtering. X-ray diffraction (XRD) analysis confirmed the polycrystalline nature of the films. The effect of grain size on transmittance was investigated. Magnetic measurements revealed the presence of magnetic ordering in the films. Partial densities of states (PDOS) of the Co2CrAl were calculated by density functional theory (DFT) methods using the Vienna Ab initio Simulation Package (VASP). Co2CrAl thin film deposited over a silicon substrate was investigated for I–V characteristics. The electrical behaviour confirmed the existence of a Co2CrAl/n-Si Schottky contact, which suggests a spin injection phenomenon from Co2CrAl to n-Si by tunnelling through the lowered Schottky barrier.
Bibliographical noteFunding Information:
We would like to thank DST, Govt. of India for financial support. We would like to acknowledge CIR, MNNIT Allahabad for the experimental and characterization support. Special thanks to Professor K.G. Suresh from IIT Bombay, Mumbai (India), for helping us in proofreading the final version of the manuscript.
© 2020, The Minerals, Metals & Materials Society.
- CoCrAl Heusler alloy
- Schottky junction
- magnetic thin films
- spin injection device