Material Study of Co2CrAl Heusler Alloy Magnetic Thin Film and Co2CrAl/n-Si Schottky Junction Device

Rashmi Singh; Faizan Ahmad; Kashif Nazeer; Rachana Kumar; Naresh Kumar; Animesh K. Ojha; Sunil Singh Kushvaha; Pramod Kumar

doi:10.1007/s11664-020-08067-0

Material Study of Co₂CrAl Heusler Alloy Magnetic Thin Film and Co₂CrAl/n-Si Schottky Junction Device

Rashmi Singh, Faizan Ahmad, Kashif Nazeer, Rachana Kumar, Naresh Kumar, Animesh K. Ojha, Sunil Singh Kushvaha, Pramod Kumar

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The structural, optical, magnetic, and electrical properties of Co₂CrAl Heusler alloy magnetic thin films grown on n-type silicon (100) substrate (n-Si) and glass substrate were studied. The films were deposited using DC magnetron sputtering. X-ray diffraction (XRD) analysis confirmed the polycrystalline nature of the films. The effect of grain size on transmittance was investigated. Magnetic measurements revealed the presence of magnetic ordering in the films. Partial densities of states (PDOS) of the Co₂CrAl were calculated by density functional theory (DFT) methods using the Vienna Ab initio Simulation Package (VASP). Co₂CrAl thin film deposited over a silicon substrate was investigated for I–V characteristics. The electrical behaviour confirmed the existence of a Co₂CrAl/n-Si Schottky contact, which suggests a spin injection phenomenon from Co₂CrAl to n-Si by tunnelling through the lowered Schottky barrier.

Original language	English
Pages (from-to)	3652-3658
Number of pages	7
Journal	Journal of Electronic Materials
Volume	49
Issue number	6
DOIs	https://doi.org/10.1007/s11664-020-08067-0
State	Published - 1 Jun 2020
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2020, The Minerals, Metals & Materials Society.

Funding

We would like to thank DST, Govt. of India for financial support. We would like to acknowledge CIR, MNNIT Allahabad for the experimental and characterization support. Special thanks to Professor K.G. Suresh from IIT Bombay, Mumbai (India), for helping us in proofreading the final version of the manuscript.

Funders	Funder number
Department of Science and Technology, Ministry of Science and Technology, India
Indian Institute of Technology Bombay

Keywords

CoCrAl Heusler alloy
Schottky junction
magnetic thin films
spin injection device
spintronics
tunnelling

Access to Document

10.1007/s11664-020-08067-0

Cite this

@article{cb9809c9fe11430ab004f797cc3b745e,

title = "Material Study of Co2CrAl Heusler Alloy Magnetic Thin Film and Co2CrAl/n-Si Schottky Junction Device",

abstract = "The structural, optical, magnetic, and electrical properties of Co2CrAl Heusler alloy magnetic thin films grown on n-type silicon (100) substrate (n-Si) and glass substrate were studied. The films were deposited using DC magnetron sputtering. X-ray diffraction (XRD) analysis confirmed the polycrystalline nature of the films. The effect of grain size on transmittance was investigated. Magnetic measurements revealed the presence of magnetic ordering in the films. Partial densities of states (PDOS) of the Co2CrAl were calculated by density functional theory (DFT) methods using the Vienna Ab initio Simulation Package (VASP). Co2CrAl thin film deposited over a silicon substrate was investigated for I–V characteristics. The electrical behaviour confirmed the existence of a Co2CrAl/n-Si Schottky contact, which suggests a spin injection phenomenon from Co2CrAl to n-Si by tunnelling through the lowered Schottky barrier.",

keywords = "CoCrAl Heusler alloy, Schottky junction, magnetic thin films, spin injection device, spintronics, tunnelling",

author = "Rashmi Singh and Faizan Ahmad and Kashif Nazeer and Rachana Kumar and Naresh Kumar and Ojha, {Animesh K.} and Kushvaha, {Sunil Singh} and Pramod Kumar",

note = "Publisher Copyright: {\textcopyright} 2020, The Minerals, Metals & Materials Society.",

year = "2020",

month = jun,

day = "1",

doi = "10.1007/s11664-020-08067-0",

language = "אנגלית",

volume = "49",

pages = "3652--3658",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "6",

}

TY - JOUR

T1 - Material Study of Co2CrAl Heusler Alloy Magnetic Thin Film and Co2CrAl/n-Si Schottky Junction Device

AU - Singh, Rashmi

AU - Ahmad, Faizan

AU - Nazeer, Kashif

AU - Kumar, Rachana

AU - Kumar, Naresh

AU - Ojha, Animesh K.

AU - Kushvaha, Sunil Singh

AU - Kumar, Pramod

PY - 2020/6/1

Y1 - 2020/6/1

N2 - The structural, optical, magnetic, and electrical properties of Co2CrAl Heusler alloy magnetic thin films grown on n-type silicon (100) substrate (n-Si) and glass substrate were studied. The films were deposited using DC magnetron sputtering. X-ray diffraction (XRD) analysis confirmed the polycrystalline nature of the films. The effect of grain size on transmittance was investigated. Magnetic measurements revealed the presence of magnetic ordering in the films. Partial densities of states (PDOS) of the Co2CrAl were calculated by density functional theory (DFT) methods using the Vienna Ab initio Simulation Package (VASP). Co2CrAl thin film deposited over a silicon substrate was investigated for I–V characteristics. The electrical behaviour confirmed the existence of a Co2CrAl/n-Si Schottky contact, which suggests a spin injection phenomenon from Co2CrAl to n-Si by tunnelling through the lowered Schottky barrier.

AB - The structural, optical, magnetic, and electrical properties of Co2CrAl Heusler alloy magnetic thin films grown on n-type silicon (100) substrate (n-Si) and glass substrate were studied. The films were deposited using DC magnetron sputtering. X-ray diffraction (XRD) analysis confirmed the polycrystalline nature of the films. The effect of grain size on transmittance was investigated. Magnetic measurements revealed the presence of magnetic ordering in the films. Partial densities of states (PDOS) of the Co2CrAl were calculated by density functional theory (DFT) methods using the Vienna Ab initio Simulation Package (VASP). Co2CrAl thin film deposited over a silicon substrate was investigated for I–V characteristics. The electrical behaviour confirmed the existence of a Co2CrAl/n-Si Schottky contact, which suggests a spin injection phenomenon from Co2CrAl to n-Si by tunnelling through the lowered Schottky barrier.

KW - CoCrAl Heusler alloy

KW - Schottky junction

KW - magnetic thin films

KW - spin injection device

KW - spintronics

KW - tunnelling

UR - http://www.scopus.com/inward/record.url?scp=85082057081&partnerID=8YFLogxK

U2 - 10.1007/s11664-020-08067-0

DO - 10.1007/s11664-020-08067-0

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:85082057081

SN - 0361-5235

VL - 49

SP - 3652

EP - 3658

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 6

ER -