Magnetoresistance tensor of La 0.8 Sr 0.2 MnO 3

Y Bason; J Hoffman; CH Ahn; L. Klein

Magnetoresistance tensor of La 0.8 Sr 0.2 MnO 3

Y Bason, J Hoffman, CH Ahn, L. Klein

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis-oriented epitaxial thin films of La0.8Sr0.2MnO3 for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to fourth order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the biaxial magnetocrystalline anisotropy in our samples.

Original language	American English
Journal	Physical Review B (Condensed Matter and Materials Physics)
Volume	79
Issue number	9
State	Published - 2009

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@article{36efce2258874645ba5a8743a5c081e2,

title = "Magnetoresistance tensor of La 0.8 Sr 0.2 MnO 3",

abstract = "We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis-oriented epitaxial thin films of La0.8Sr0.2MnO3 for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to fourth order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the biaxial magnetocrystalline anisotropy in our samples.",

author = "Y Bason and J Hoffman and CH Ahn and L. Klein",

year = "2009",

language = "American English",

volume = "79",

journal = "Physical Review B (Condensed Matter and Materials Physics)",

number = "9",

}

TY - JOUR

T1 - Magnetoresistance tensor of La 0.8 Sr 0.2 MnO 3

AU - Bason, Y

AU - Hoffman, J

AU - Ahn, CH

AU - Klein, L.

PY - 2009

Y1 - 2009

N2 - We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis-oriented epitaxial thin films of La0.8Sr0.2MnO3 for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to fourth order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the biaxial magnetocrystalline anisotropy in our samples.

AB - We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis-oriented epitaxial thin films of La0.8Sr0.2MnO3 for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to fourth order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the biaxial magnetocrystalline anisotropy in our samples.

M3 - Article

VL - 79

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

IS - 9

ER -

Magnetoresistance tensor of La 0.8 Sr 0.2 MnO 3

Abstract

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