Magnetoresistance scaling in BaRuO3

S. Levy, Y. Kats, M. K. Lee, C. B. Eom, L. Klein

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


We present measurements of electrical resistivity (ρ) and magnetoresistance (Δρ/ρ) in epitaxial thin films of BaRuO3 with a hexagonal four-layer structure. The low-temperature resistivity (3 K<T<20 K) shows a quadratic temperature dependence ρ = ρ0 + aT2. Measurements of magnetoresistance in the temperature range of 5 K<T<50 K and fields up to 8 T reveal a failure of the conventional Kohler's rule. On the other hand, we find that the magnetoresistance data can be scaled if one assumes that the resistivity ρ is related to the scattering time τ as ρ∝1/τα with α≃0.25.

Original languageEnglish
Pages (from-to)795-796
Number of pages2
JournalPhysica B: Condensed Matter
StatePublished - Mar 2002
EventInternational Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States
Duration: 6 Aug 20026 Aug 2002

Bibliographical note

Funding Information:
This research was supported by the Israel Science Foundation founded by the Israel Academy of Sciences and Humanities, and by National Science Foundation Grant No. DMR 980244 and DMR 9973801.


  • Magnetoresistance
  • Non-Fermi-liquid bahevior
  • Ruthenates


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