Magnetoresistance scaling in BaRuO 3

S Levy, Y Kats, MK Lee, CB Eom, L. Klein

Research output: Contribution to journalArticlepeer-review

Abstract

We present measurements of electrical resistivity (ρ) and magnetoresistance (Δρ/ρ) in epitaxial thin films of BaRuO3 with a hexagonal four-layer structure. The low-temperature resistivity Full-size image (<1 K) shows a quadratic temperature dependence ρ=ρ0+aT2. Measurements of magnetoresistance in the temperature range of Full-size image (<1 K) and fields up to Full-size image (<1 K) reveal a failure of the conventional Kohler's rule. On the other hand, we find that the magnetoresistance data can be scaled if one assumes that the resistivity ρ is related to the scattering time τ as ρ∝1/τα with α≃0.25.
Original languageAmerican English
Pages (from-to)795-796
JournalPhysica B: Condensed Matter
Volume312
StatePublished - 2002

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