Magnetoelectronic devices based on colossal magnetoresistive thin films

C Ahn; L. Klein; Y Basson; X Hong; JB Yau

Magnetoelectronic devices based on colossal magnetoresistive thin films

C Ahn (Inventor), L. Klein (Inventor), Y Basson (Inventor), X Hong (Inventor), JB Yau (Inventor)

Department of Physics

Research output: Patent

Abstract

The present invention is directed to the use of perovskite manganite thin films and other magnetic films that exhibit both planar Hall effect and biaxial magnetic anisotropy to form the active area in magnetic sensor devices and in magnetic bit cells used in magnetoresistive random access memory (MRAM) devices. The manganite thin films of the invention are ferromagnetic manganites of the formula R1-xAxMnO3, wherein R is a rare-earth metal, A is an alkaline earth metal, and x is generally between about 0.15 and about 0.5.

Original language	American English
State	Published - 2010

Bibliographical note

Collaboration - Bar Ilan, Yale.

Cite this

@misc{cf8fa0845b814d198ad65599c8bfd894,

title = "Magnetoelectronic devices based on colossal magnetoresistive thin films",

abstract = "The present invention is directed to the use of perovskite manganite thin films and other magnetic films that exhibit both planar Hall effect and biaxial magnetic anisotropy to form the active area in magnetic sensor devices and in magnetic bit cells used in magnetoresistive random access memory (MRAM) devices. The manganite thin films of the invention are ferromagnetic manganites of the formula R1-xAxMnO3, wherein R is a rare-earth metal, A is an alkaline earth metal, and x is generally between about 0.15 and about 0.5.",

author = "C Ahn and L. Klein and Y Basson and X Hong and JB Yau",

year = "2010",

language = "American English",

publisher = "US Patent Office",

type = "Patent",

}

TY - PAT

T1 - Magnetoelectronic devices based on colossal magnetoresistive thin films

AU - Ahn, C

AU - Klein, L.

AU - Basson, Y

AU - Hong, X

AU - Yau, JB

N1 - Collaboration - Bar Ilan, Yale.

PY - 2010

Y1 - 2010

N2 - The present invention is directed to the use of perovskite manganite thin films and other magnetic films that exhibit both planar Hall effect and biaxial magnetic anisotropy to form the active area in magnetic sensor devices and in magnetic bit cells used in magnetoresistive random access memory (MRAM) devices. The manganite thin films of the invention are ferromagnetic manganites of the formula R1-xAxMnO3, wherein R is a rare-earth metal, A is an alkaline earth metal, and x is generally between about 0.15 and about 0.5.

AB - The present invention is directed to the use of perovskite manganite thin films and other magnetic films that exhibit both planar Hall effect and biaxial magnetic anisotropy to form the active area in magnetic sensor devices and in magnetic bit cells used in magnetoresistive random access memory (MRAM) devices. The manganite thin films of the invention are ferromagnetic manganites of the formula R1-xAxMnO3, wherein R is a rare-earth metal, A is an alkaline earth metal, and x is generally between about 0.15 and about 0.5.

M3 - Patent

PB - US Patent Office

ER -

Magnetoelectronic devices based on colossal magnetoresistive thin films

Abstract

Bibliographical note

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Cite this