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Magneto-transport behaviour of Bi
2
Se
3-x
Te
x
: Role of disorder
E. P. Amaladass
, T. R. Devidas
, Shilpam Sharma
, C. S. Sundar
, Awadhesh Mani
, A. Bharathi
Indira Gandhi Centre for Atomic Research
UGC-DAE CSR
Research output
:
Contribution to journal
›
Article
›
peer-review
25
Scopus citations
Overview
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Dive into the research topics of 'Magneto-transport behaviour of Bi
2
Se
3-x
Te
x
: Role of disorder'. Together they form a unique fingerprint.
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Keyphrases
Transport Behavior
100%
Magnetotransport
100%
Bismuth Telluride
100%
Magnetoresistance
50%
Resistance Measurement
33%
Low Temperature
33%
Weak Localization
33%
Te-doped
33%
Magnetic Field
16%
Single Crystal
16%
Negative Magnetoresistance
16%
Temperature Range
16%
Resistivity
16%
Hall Resistance
16%
Low Magnetic Field
16%
Positive Magnetoresistance
16%
Resistance Resistance
16%
High Field
16%
Carrier Density
16%
Hall Effect Measurement
16%
Field Temperature
16%
Carrier Mobility
16%
Shubnikov-de Haas Oscillations
16%
Cusp
16%
Regel
16%
Metallic Behavior
16%
Topological Surface States
16%
Hass
16%
Material Science
Magnetoresistance
100%
Magneto-Transport
100%
Single Crystal
20%
Electrical Resistivity
20%
Carrier Concentration
20%
Carrier Mobility
20%
Physics
Magnetoresistance
100%
Magnetic Field
40%
Photoelectric Emission
20%
Single Crystal
20%
Hall Resistance
20%
Carrier Mobility
20%