LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP

N. Cohen; R. Gardi; G. Sarusi; A. Sa'ar; M. Byloos; A. Bezinger; A. J. SpringThorpe; H. C. Liu

doi:10.1016/j.infrared.2006.10.022

LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP

N. Cohen
, R. Gardi
, G. Sarusi
, A. Sa'ar
, M. Byloos
, A. Bezinger
, A. J. SpringThorpe
, H. C. Liu

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A novel two color infrared (IR) device that allows fast electrical switching between the short wavelength IR (SWIR) band (0.9-1.6 μm) and the long wavelength IR (LWIR) band (8-12 μm) is presented. The integrated sensor is based on MOCVD grown, lattice matched (to InP substrate) epilayers of InGaAs/InP and consists of two, monolithically integrated sections of heterojunction bipolar transistor (HBT) and quantum well infrared photodetector (QWIP).

Original language	English
Pages (from-to)	253-259
Number of pages	7
Journal	Infrared Physics and Technology
Volume	50
Issue number	2-3
DOIs	https://doi.org/10.1016/j.infrared.2006.10.022
State	Published - Apr 2007
Externally published	Yes

Keywords

HBT
InP
QWIP
SWIR
See-spot
Two color

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10.1016/j.infrared.2006.10.022

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title = "LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP",

abstract = "A novel two color infrared (IR) device that allows fast electrical switching between the short wavelength IR (SWIR) band (0.9-1.6 μm) and the long wavelength IR (LWIR) band (8-12 μm) is presented. The integrated sensor is based on MOCVD grown, lattice matched (to InP substrate) epilayers of InGaAs/InP and consists of two, monolithically integrated sections of heterojunction bipolar transistor (HBT) and quantum well infrared photodetector (QWIP).",

keywords = "HBT, InP, QWIP, SWIR, See-spot, Two color",

author = "N. Cohen and R. Gardi and G. Sarusi and A. Sa'ar and M. Byloos and A. Bezinger and SpringThorpe, \{A. J.\} and Liu, \{H. C.\}",

year = "2007",

month = apr,

doi = "10.1016/j.infrared.2006.10.022",

language = "אנגלית",

volume = "50",

pages = "253--259",

journal = "Infrared Physics and Technology",

issn = "1350-4495",

publisher = "Elsevier BV",

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TY - JOUR

T1 - LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP

AU - Cohen, N.

AU - Gardi, R.

AU - Sarusi, G.

AU - Sa'ar, A.

AU - Byloos, M.

AU - Bezinger, A.

AU - SpringThorpe, A. J.

AU - Liu, H. C.

PY - 2007/4

Y1 - 2007/4

N2 - A novel two color infrared (IR) device that allows fast electrical switching between the short wavelength IR (SWIR) band (0.9-1.6 μm) and the long wavelength IR (LWIR) band (8-12 μm) is presented. The integrated sensor is based on MOCVD grown, lattice matched (to InP substrate) epilayers of InGaAs/InP and consists of two, monolithically integrated sections of heterojunction bipolar transistor (HBT) and quantum well infrared photodetector (QWIP).

AB - A novel two color infrared (IR) device that allows fast electrical switching between the short wavelength IR (SWIR) band (0.9-1.6 μm) and the long wavelength IR (LWIR) band (8-12 μm) is presented. The integrated sensor is based on MOCVD grown, lattice matched (to InP substrate) epilayers of InGaAs/InP and consists of two, monolithically integrated sections of heterojunction bipolar transistor (HBT) and quantum well infrared photodetector (QWIP).

KW - HBT

KW - InP

KW - QWIP

KW - SWIR

KW - See-spot

KW - Two color

UR - https://www.scopus.com/pages/publications/34047182020

U2 - 10.1016/j.infrared.2006.10.022

DO - 10.1016/j.infrared.2006.10.022

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AN - SCOPUS:34047182020

SN - 1350-4495

VL - 50

SP - 253

EP - 259

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

IS - 2-3

ER -

LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP

Abstract

Keywords

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