Luminescent characteristics of pulsed laser deposited epitaxial eu-doped Y2O3 films

D. Kumar, K. G. Cho, Zhang Chen, V. Craciun, P. H. Hollow Ay, Rajiv K. Singh

Research output: Contribution to journalConference articlepeer-review


The growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (EuiYjC) thin films are reported. The Eu:Y2Oj films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O.i films can grow epitaxially on (100) LaAlOj substrates under optimized deposition parameters. The epitaxial growth of EurYaOj films on LaAlOj, which has a lattice mismatch of - 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2U3 films with an intense CL emission at 611 nm.

Original languageEnglish
Pages (from-to)11-16
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1999
EventProceedings of the 1999 MRS Spring Meeting - Symposium BB: 'Multicomponent Oxide Films for Electronics' - San Francisco, CA, United States
Duration: 6 Apr 19998 Apr 1999


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