Luminescent characteristics of pulsed laser deposited epitaxial eu-doped Y2O3 films

D. Kumar; K. G. Cho; Zhang Chen; V. Craciun; P. H. Hollow Ay; Rajiv K. Singh

doi:10.1557/proc-574-11

Luminescent characteristics of pulsed laser deposited epitaxial eu-doped Y₂O₃ films

D. Kumar, K. G. Cho, Zhang Chen, V. Craciun, P. H. Hollow Ay, Rajiv K. Singh

Department of Physics - at Bar-Ilan University

Research output: Contribution to journal › Conference article › peer-review

Abstract

The growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (EuiYjC) thin films are reported. The Eu:Y2Oj films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O.i films can grow epitaxially on (100) LaAlOj substrates under optimized deposition parameters. The epitaxial growth of EurYaOj films on LaAlOj, which has a lattice mismatch of - 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2U3 films with an intense CL emission at 611 nm.

Original language	English
Pages (from-to)	11-16
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	574
DOIs	https://doi.org/10.1557/proc-574-11
State	Published - 1999
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium BB: 'Multicomponent Oxide Films for Electronics' - San Francisco, CA, United States Duration: 6 Apr 1999 → 8 Apr 1999

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title = "Luminescent characteristics of pulsed laser deposited epitaxial eu-doped Y2O3 films",

abstract = "The growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (EuiYjC) thin films are reported. The Eu:Y2Oj films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O.i films can grow epitaxially on (100) LaAlOj substrates under optimized deposition parameters. The epitaxial growth of EurYaOj films on LaAlOj, which has a lattice mismatch of - 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2U3 films with an intense CL emission at 611 nm.",

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AU - Kumar, D.

AU - Cho, K. G.

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AU - Craciun, V.

AU - Hollow Ay, P. H.

AU - Singh, Rajiv K.

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AB - The growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (EuiYjC) thin films are reported. The Eu:Y2Oj films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O.i films can grow epitaxially on (100) LaAlOj substrates under optimized deposition parameters. The epitaxial growth of EurYaOj films on LaAlOj, which has a lattice mismatch of - 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2U3 films with an intense CL emission at 611 nm.

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Luminescent characteristics of pulsed laser deposited epitaxial eu-doped Y₂O₃ films

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