Luminescence of pulsed laser deposited Eu doped yttrium oxide films

S. L. Jones; D. Kumar; Rajiv K. Singh; P. H. Holloway

doi:10.1063/1.119551

Luminescence of pulsed laser deposited Eu doped yttrium oxide films

S. L. Jones
, D. Kumar
, Rajiv K. Singh
, P. H. Holloway

University of Florida

Research output: Contribution to journal › Article › peer-review

279 Scopus citations

Abstract

Europium doped yttrium oxide (Eu: Y₂O₃) phosphor thin films were grown using a pulsed laser deposition (PLD) technique at varying growth conditions. The structural characterization carried out on a series of Eu: Y₂O₃ films grown on (100) silicon at substrate temperatures in the range of 250-600 °C and oxygen pressure in the range of 10^-5 Torr to 200 mTorr indicated that films were preferentially (111) oriented. Measurements of photoluminescence and cathodoluminescence properties of laser deposited Eu:Y₂O₃ thin films and powder used for laser target showed that the best in situ grown films were ∼10%-22% as bright as Eu:Y₂O₃ powder. A postdeposition annealing treatment of Eu:Y₂O₃ films led to further improvements in their brightness (up to ∼70% with respect to Eu:Y₂O₃ powder), with cluster sizes of <400 nm.

Original language	English
Pages (from-to)	404-406
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	3
DOIs	https://doi.org/10.1063/1.119551
State	Published - 21 Jul 1997
Externally published	Yes

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title = "Luminescence of pulsed laser deposited Eu doped yttrium oxide films",

abstract = "Europium doped yttrium oxide (Eu: Y2O3) phosphor thin films were grown using a pulsed laser deposition (PLD) technique at varying growth conditions. The structural characterization carried out on a series of Eu: Y2O3 films grown on (100) silicon at substrate temperatures in the range of 250-600 °C and oxygen pressure in the range of 10-5 Torr to 200 mTorr indicated that films were preferentially (111) oriented. Measurements of photoluminescence and cathodoluminescence properties of laser deposited Eu:Y2O3 thin films and powder used for laser target showed that the best in situ grown films were ∼10\%-22\% as bright as Eu:Y2O3 powder. A postdeposition annealing treatment of Eu:Y2O3 films led to further improvements in their brightness (up to ∼70\% with respect to Eu:Y2O3 powder), with cluster sizes of <400 nm.",

author = "Jones, \{S. L.\} and D. Kumar and Singh, \{Rajiv K.\} and Holloway, \{P. H.\}",

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T1 - Luminescence of pulsed laser deposited Eu doped yttrium oxide films

AU - Jones, S. L.

AU - Kumar, D.

AU - Singh, Rajiv K.

AU - Holloway, P. H.

PY - 1997/7/21

Y1 - 1997/7/21

N2 - Europium doped yttrium oxide (Eu: Y2O3) phosphor thin films were grown using a pulsed laser deposition (PLD) technique at varying growth conditions. The structural characterization carried out on a series of Eu: Y2O3 films grown on (100) silicon at substrate temperatures in the range of 250-600 °C and oxygen pressure in the range of 10-5 Torr to 200 mTorr indicated that films were preferentially (111) oriented. Measurements of photoluminescence and cathodoluminescence properties of laser deposited Eu:Y2O3 thin films and powder used for laser target showed that the best in situ grown films were ∼10%-22% as bright as Eu:Y2O3 powder. A postdeposition annealing treatment of Eu:Y2O3 films led to further improvements in their brightness (up to ∼70% with respect to Eu:Y2O3 powder), with cluster sizes of <400 nm.

AB - Europium doped yttrium oxide (Eu: Y2O3) phosphor thin films were grown using a pulsed laser deposition (PLD) technique at varying growth conditions. The structural characterization carried out on a series of Eu: Y2O3 films grown on (100) silicon at substrate temperatures in the range of 250-600 °C and oxygen pressure in the range of 10-5 Torr to 200 mTorr indicated that films were preferentially (111) oriented. Measurements of photoluminescence and cathodoluminescence properties of laser deposited Eu:Y2O3 thin films and powder used for laser target showed that the best in situ grown films were ∼10%-22% as bright as Eu:Y2O3 powder. A postdeposition annealing treatment of Eu:Y2O3 films led to further improvements in their brightness (up to ∼70% with respect to Eu:Y2O3 powder), with cluster sizes of <400 nm.

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Luminescence of pulsed laser deposited Eu doped yttrium oxide films

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