Luminescence of pulsed laser deposited Eu doped yttrium oxide films

S. L. Jones, D. Kumar, Rajiv K. Singh, P. H. Holloway

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Abstract

Europium doped yttrium oxide (Eu: Y2O3) phosphor thin films were grown using a pulsed laser deposition (PLD) technique at varying growth conditions. The structural characterization carried out on a series of Eu: Y2O3 films grown on (100) silicon at substrate temperatures in the range of 250-600 °C and oxygen pressure in the range of 10-5 Torr to 200 mTorr indicated that films were preferentially (111) oriented. Measurements of photoluminescence and cathodoluminescence properties of laser deposited Eu:Y2O3 thin films and powder used for laser target showed that the best in situ grown films were ∼10%-22% as bright as Eu:Y2O3 powder. A postdeposition annealing treatment of Eu:Y2O3 films led to further improvements in their brightness (up to ∼70% with respect to Eu:Y2O3 powder), with cluster sizes of <400 nm.

Original languageEnglish
Pages (from-to)404-406
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number3
DOIs
StatePublished - 21 Jul 1997
Externally publishedYes

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