Luminescence behavior of pulsed laser deposited Eu:Y2O3 thin film phosphors on sapphire substrates

K. G. Cho; D. Kumar; P. H. Holloway; Rajiv K. Singh

doi:10.1063/1.122671

Luminescence behavior of pulsed laser deposited Eu:Y₂O₃ thin film phosphors on sapphire substrates

K. G. Cho, D. Kumar, P. H. Holloway, Rajiv K. Singh

University of Florida

Research output: Contribution to journal › Article › peer-review

150 Scopus citations

Abstract

Europium-doped yttrium oxide (Eu:Y₂O₃) luminescent thin films have been grown in situ on single crystal (0001) sapphire substrates using a pulsed laser deposition technique. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The photoluminescence (PL) and cathodoluminescence (CL) brightness data obtained from the Eu:Y₂O₃ films grown under optimized conditions have indicated that sapphire is a promising substrate for the growth of high quality Eu:Y₂O₃ thin film red phosphor. The success in the fabrication of Eu:Y₂O₃ films with high PL and CL brightness is attributed to favorable optical properties (low absorption of and low refractive index for red light) of the substrate material and improved growth of grains with unidirectional orientation on (0001) sapphire substrates.

Original language	English
Pages (from-to)	3058-3060
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	21
DOIs	https://doi.org/10.1063/1.122671
State	Published - 1998
Externally published	Yes

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abstract = "Europium-doped yttrium oxide (Eu:Y2O3) luminescent thin films have been grown in situ on single crystal (0001) sapphire substrates using a pulsed laser deposition technique. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The photoluminescence (PL) and cathodoluminescence (CL) brightness data obtained from the Eu:Y2O3 films grown under optimized conditions have indicated that sapphire is a promising substrate for the growth of high quality Eu:Y2O3 thin film red phosphor. The success in the fabrication of Eu:Y2O3 films with high PL and CL brightness is attributed to favorable optical properties (low absorption of and low refractive index for red light) of the substrate material and improved growth of grains with unidirectional orientation on (0001) sapphire substrates.",

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AU - Cho, K. G.

AU - Kumar, D.

AU - Holloway, P. H.

AU - Singh, Rajiv K.

PY - 1998

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AB - Europium-doped yttrium oxide (Eu:Y2O3) luminescent thin films have been grown in situ on single crystal (0001) sapphire substrates using a pulsed laser deposition technique. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The photoluminescence (PL) and cathodoluminescence (CL) brightness data obtained from the Eu:Y2O3 films grown under optimized conditions have indicated that sapphire is a promising substrate for the growth of high quality Eu:Y2O3 thin film red phosphor. The success in the fabrication of Eu:Y2O3 films with high PL and CL brightness is attributed to favorable optical properties (low absorption of and low refractive index for red light) of the substrate material and improved growth of grains with unidirectional orientation on (0001) sapphire substrates.

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Luminescence behavior of pulsed laser deposited Eu:Y₂O₃ thin film phosphors on sapphire substrates

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