Low voltage SRAMs and the scalability of the 9T Supply Feedback SRAM

Janna Mezhibovsky; Adam Teman; Alexander Fish

doi:10.1109/socc.2011.6085135

Low voltage SRAMs and the scalability of the 9T Supply Feedback SRAM

Janna Mezhibovsky, Adam Teman, Alexander Fish

Ben-Gurion University of the Negev

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

Recent research has shown that minimum energy operation of digital circuits is in the sub-threshold region, and a good trade-off between power and performance can be achieved through operation at near threshold supply voltages. However, due to process variations and device mismatch at nanoscale technology nodes, voltage scaling of standard SRAMs is limited to strong-inversion operation. One of the techniques for enabling operation at low voltages is implementation of a Supply Feedback mechanism that internally weakens the pull-up current during write operations. This concept was recently implemented in a 9T Supply Feedback SRAM (SF-SRAM) cell, fabricated and successfully tested in a 40nm CMOS technology. In this paper, we review existing low voltage SRAM solutions, overview the SF-SRAM cell, and show its scalability into deep nanoscale technologies by using the 22nm predictive model.

Original language	English
Title of host publication	Proceedings - IEEE International SOC Conference, SOCC 2011
Pages	136-141
Number of pages	6
DOIs	https://doi.org/10.1109/socc.2011.6085135
State	Published - 2011
Externally published	Yes
Event	24th IEEE International System on Chip Conference, SOCC 2011 - Taipei, Taiwan, Province of China Duration: 26 Sep 2011 → 28 Sep 2011

Publication series

Name	International System on Chip Conference
ISSN (Print)	2164-1676
ISSN (Electronic)	2164-1706

Conference

Conference	24th IEEE International System on Chip Conference, SOCC 2011
Country/Territory	Taiwan, Province of China
City	Taipei
Period	26/09/11 → 28/09/11

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10.1109/socc.2011.6085135

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title = "Low voltage SRAMs and the scalability of the 9T Supply Feedback SRAM",

abstract = "Recent research has shown that minimum energy operation of digital circuits is in the sub-threshold region, and a good trade-off between power and performance can be achieved through operation at near threshold supply voltages. However, due to process variations and device mismatch at nanoscale technology nodes, voltage scaling of standard SRAMs is limited to strong-inversion operation. One of the techniques for enabling operation at low voltages is implementation of a Supply Feedback mechanism that internally weakens the pull-up current during write operations. This concept was recently implemented in a 9T Supply Feedback SRAM (SF-SRAM) cell, fabricated and successfully tested in a 40nm CMOS technology. In this paper, we review existing low voltage SRAM solutions, overview the SF-SRAM cell, and show its scalability into deep nanoscale technologies by using the 22nm predictive model.",

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doi = "10.1109/socc.2011.6085135",

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Mezhibovsky, J, Teman, A & Fish, A 2011, Low voltage SRAMs and the scalability of the 9T Supply Feedback SRAM. in Proceedings - IEEE International SOC Conference, SOCC 2011., 6085135, International System on Chip Conference, pp. 136-141, 24th IEEE International System on Chip Conference, SOCC 2011, Taipei, Taiwan, Province of China, 26/09/11. https://doi.org/10.1109/socc.2011.6085135

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AB - Recent research has shown that minimum energy operation of digital circuits is in the sub-threshold region, and a good trade-off between power and performance can be achieved through operation at near threshold supply voltages. However, due to process variations and device mismatch at nanoscale technology nodes, voltage scaling of standard SRAMs is limited to strong-inversion operation. One of the techniques for enabling operation at low voltages is implementation of a Supply Feedback mechanism that internally weakens the pull-up current during write operations. This concept was recently implemented in a 9T Supply Feedback SRAM (SF-SRAM) cell, fabricated and successfully tested in a 40nm CMOS technology. In this paper, we review existing low voltage SRAM solutions, overview the SF-SRAM cell, and show its scalability into deep nanoscale technologies by using the 22nm predictive model.

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Low voltage SRAMs and the scalability of the 9T Supply Feedback SRAM

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