TY - JOUR
T1 - Low temperature, template-free route to nickel thin films and nanowires
AU - Shviro, Meital
AU - Zitoun, David
PY - 2012/2/7
Y1 - 2012/2/7
N2 - In this manuscript, we report on the elaboration of nickel thin films, isolated clusters and nanowires on silicon, glass and polymers by a low temperature deposition technique. The process is based on the thermal decomposition of Ni (η 4-C 8H 12) 2 at temperatures as low as 80 °C, which exclusively yields metallic Ni and a volatile by-product. The low temperature of the process makes it compatible with most of the substrates, even polymers and organic layers. Several deposition techniques are explored, among them spin coating of the organometallic complex in solution, which allows controlling nickel film thickness down to several nanometers. The density of the film can be varied by the speed of the spin coater with the formation of nanowires being observed for an optimized speed. The nanowires form a network of parallel lines on silicon and the phenomenon will be discussed as a selective dewetting of the organometallic precursor. All samples are fully characterized by SEM, EDS, cross-sectional HRTEM, ellipsometry, AFM, MFM and SQUID magnetic measurements.
AB - In this manuscript, we report on the elaboration of nickel thin films, isolated clusters and nanowires on silicon, glass and polymers by a low temperature deposition technique. The process is based on the thermal decomposition of Ni (η 4-C 8H 12) 2 at temperatures as low as 80 °C, which exclusively yields metallic Ni and a volatile by-product. The low temperature of the process makes it compatible with most of the substrates, even polymers and organic layers. Several deposition techniques are explored, among them spin coating of the organometallic complex in solution, which allows controlling nickel film thickness down to several nanometers. The density of the film can be varied by the speed of the spin coater with the formation of nanowires being observed for an optimized speed. The nanowires form a network of parallel lines on silicon and the phenomenon will be discussed as a selective dewetting of the organometallic precursor. All samples are fully characterized by SEM, EDS, cross-sectional HRTEM, ellipsometry, AFM, MFM and SQUID magnetic measurements.
UR - http://www.scopus.com/inward/record.url?scp=84856712038&partnerID=8YFLogxK
U2 - 10.1039/c1nr11177a
DO - 10.1039/c1nr11177a
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AN - SCOPUS:84856712038
SN - 2040-3364
VL - 4
SP - 762
EP - 767
JO - Nanoscale
JF - Nanoscale
IS - 3
ER -