TY - JOUR
T1 - Low-temperature saturation of 2D variable-range-hopping conductivity induced by the gate covering the mesa edge
AU - Levin, M.
AU - Lu, Tie Cheng
AU - Shlimak, I.
AU - Ginodman, V.
AU - Resnick, L.
AU - Sandomirskii, V.
AU - Friedland, K. J.
AU - Hey, R.
PY - 2002
Y1 - 2002
N2 - The influence of the Schottky gate shape on the low temperature conductivity in gated Si-δ-doped GaAs was investigated. For samples with a gate covering the top and also the mesa edge of the structure, an unexpected low-temperature saturation of the variable-range-hopping conductivity (VRH) was observed at T < 1 K. We show that this effect is definitely connected with the gate covering the mesa edge. Sample resistivity in "saturation regime" increases with increasing negative gate voltage. Possible influence of a strong lateral electric field, induced by the gate covering the mesa edge, on the low temperature conductivity of depleted 2D layer is discussed.
AB - The influence of the Schottky gate shape on the low temperature conductivity in gated Si-δ-doped GaAs was investigated. For samples with a gate covering the top and also the mesa edge of the structure, an unexpected low-temperature saturation of the variable-range-hopping conductivity (VRH) was observed at T < 1 K. We show that this effect is definitely connected with the gate covering the mesa edge. Sample resistivity in "saturation regime" increases with increasing negative gate voltage. Possible influence of a strong lateral electric field, induced by the gate covering the mesa edge, on the low temperature conductivity of depleted 2D layer is discussed.
UR - http://www.scopus.com/inward/record.url?scp=0035995555&partnerID=8YFLogxK
U2 - 10.1002/1521-3951(200203)230:1<217::aid-pssb217>3.0.co;2-%23
DO - 10.1002/1521-3951(200203)230:1<217::aid-pssb217>3.0.co;2-%23
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AN - SCOPUS:0035995555
SN - 0370-1972
VL - 230
SP - 217
EP - 220
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
IS - 1
ER -