Low-temperature photo-induced mass transfer in thin As20Se80 amorphous films

V. Takáts, M. L. Trunov, K. Vad, J. Hakl, D. L. Beke, Yu Kaganovskii, S. Kökényesi

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


We have detected that surface relief gratings (SRG) in amorphous chalcogenide films As20Se80 can be optically recorded at low temperature, such as 77 K. A diffusion mechanism of photo-induced (PI) mass transport is proposed. A driving force of PI mass transport is a lateral steady state electric field induced by light interference. The kinetics of PI SRG growth depends on temperature due to temperature dependence of PI diffusion coefficients and concentration of radiation defects. By comparison of low temperature kinetics with that at 300 K we estimated diffusion activation energy, which turned out 0.09 eV. We present a model that explains low diffusion activation energy.

Original languageEnglish
Article numberMLBLUED1503724
Pages (from-to)558-561
Number of pages4
JournalMaterials Letters
StatePublished - 19 Aug 2015

Bibliographical note

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© 2015 Elsevier B.V. All rights reserved.


  • Amorphous chalcogenide films
  • Diffusion
  • Photo-induced mass transport
  • Surface relief gratings


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