Low-temperature photo-induced mass transfer in thin As20Se80 amorphous films

V. Takáts; M. L. Trunov; K. Vad; J. Hakl; D. L. Beke; Yu Kaganovskii; S. Kökényesi

doi:10.1016/j.matlet.2015.08.040

Low-temperature photo-induced mass transfer in thin As₂₀Se₈₀ amorphous films

V. Takáts, M. L. Trunov, K. Vad, J. Hakl, D. L. Beke, Yu Kaganovskii, S. Kökényesi

Department of Physics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We have detected that surface relief gratings (SRG) in amorphous chalcogenide films As₂₀Se₈₀ can be optically recorded at low temperature, such as 77 K. A diffusion mechanism of photo-induced (PI) mass transport is proposed. A driving force of PI mass transport is a lateral steady state electric field induced by light interference. The kinetics of PI SRG growth depends on temperature due to temperature dependence of PI diffusion coefficients and concentration of radiation defects. By comparison of low temperature kinetics with that at 300 K we estimated diffusion activation energy, which turned out 0.09 eV. We present a model that explains low diffusion activation energy.

Original language	English
Article number	MLBLUED1503724
Pages (from-to)	558-561
Number of pages	4
Journal	Materials Letters
Volume	160
DOIs	https://doi.org/10.1016/j.matlet.2015.08.040
State	Published - 19 Aug 2015

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Keywords

Amorphous chalcogenide films
Diffusion
Photo-induced mass transport
Surface relief gratings

Access to Document

10.1016/j.matlet.2015.08.040

Cite this

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title = "Low-temperature photo-induced mass transfer in thin As20Se80 amorphous films",

abstract = "We have detected that surface relief gratings (SRG) in amorphous chalcogenide films As20Se80 can be optically recorded at low temperature, such as 77 K. A diffusion mechanism of photo-induced (PI) mass transport is proposed. A driving force of PI mass transport is a lateral steady state electric field induced by light interference. The kinetics of PI SRG growth depends on temperature due to temperature dependence of PI diffusion coefficients and concentration of radiation defects. By comparison of low temperature kinetics with that at 300 K we estimated diffusion activation energy, which turned out 0.09 eV. We present a model that explains low diffusion activation energy.",

keywords = "Amorphous chalcogenide films, Diffusion, Photo-induced mass transport, Surface relief gratings",

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AU - Takáts, V.

AU - Trunov, M. L.

AU - Vad, K.

AU - Hakl, J.

AU - Beke, D. L.

AU - Kaganovskii, Yu

AU - Kökényesi, S.

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AB - We have detected that surface relief gratings (SRG) in amorphous chalcogenide films As20Se80 can be optically recorded at low temperature, such as 77 K. A diffusion mechanism of photo-induced (PI) mass transport is proposed. A driving force of PI mass transport is a lateral steady state electric field induced by light interference. The kinetics of PI SRG growth depends on temperature due to temperature dependence of PI diffusion coefficients and concentration of radiation defects. By comparison of low temperature kinetics with that at 300 K we estimated diffusion activation energy, which turned out 0.09 eV. We present a model that explains low diffusion activation energy.

KW - Amorphous chalcogenide films

KW - Diffusion

KW - Photo-induced mass transport

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