Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics

Keyphrases

• Ammonia 33%
• Dielectric 33%
• Dielectric Applications 33%
• Dielectric Properties 33%
• Electrical Properties 100%
• Equivalent Oxide Thickness 33%
• Gate Bias 33%
• Gate Dielectric 100%
• Hafnia 100%
• Incorporation Method 100%
• Interfacial Layer 33%
• Leakage Current Density 33%
• Low Temperature 100%
• Low Temperature Method 33%
• Metal Film 33%
• Nitrogen Incorporation 100%
• Si Substrate 33%
• UV Illumination 33%

Material Science

• Density 33%
• Dielectric Material 100%
• Dielectric Property 33%
• Film 33%
• Metal Film 33%
• Oxide Compound 33%