TY - JOUR
T1 - Low-temperature growth of Y2O3 thin films by Ultraviolet-Assisted Pulsed Laser Deposition
AU - Craciun, V.
AU - Howard, J.
AU - Lambers, E. S.
AU - Singh, R. K.
AU - Craciun, D.
AU - Perriere, J.
PY - 1999
Y1 - 1999
N2 - Thin Y2O3 films have been grown on (100) Si using an in-situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique. When compared to conventional pulsed laser deposited (PLD) films under similar conditions, the UVPLD-grown films exhibited better structural and optical properties, especially those grown at lower substrate temperatures, from 200°C to 400°C. X-ray diffraction investigations showed that the films grown were highly crystalline and textured. According to X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry investigations, UVPLD-grown Y2O3 films have a better overall stoichiometry and contain less physisorbed oxygen than the conventional PLD-grown films. The refractive index values, measured in the range 300-750 nm by using variable-angle spectroscopic ellipsometry, were similar to those of a reference Y2O3 film.
AB - Thin Y2O3 films have been grown on (100) Si using an in-situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique. When compared to conventional pulsed laser deposited (PLD) films under similar conditions, the UVPLD-grown films exhibited better structural and optical properties, especially those grown at lower substrate temperatures, from 200°C to 400°C. X-ray diffraction investigations showed that the films grown were highly crystalline and textured. According to X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry investigations, UVPLD-grown Y2O3 films have a better overall stoichiometry and contain less physisorbed oxygen than the conventional PLD-grown films. The refractive index values, measured in the range 300-750 nm by using variable-angle spectroscopic ellipsometry, were similar to those of a reference Y2O3 film.
UR - http://www.scopus.com/inward/record.url?scp=0344843013&partnerID=8YFLogxK
U2 - 10.1007/s003390051464
DO - 10.1007/s003390051464
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AN - SCOPUS:0344843013
SN - 0947-8396
VL - 69
SP - S535-S538
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 7
ER -