Low-temperature growth of Y2O3 thin films by Ultraviolet-Assisted Pulsed Laser Deposition

V. Craciun, J. Howard, E. S. Lambers, R. K. Singh, D. Craciun, J. Perriere

Research output: Contribution to journalArticlepeer-review

38 Scopus citations


Thin Y2O3 films have been grown on (100) Si using an in-situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique. When compared to conventional pulsed laser deposited (PLD) films under similar conditions, the UVPLD-grown films exhibited better structural and optical properties, especially those grown at lower substrate temperatures, from 200°C to 400°C. X-ray diffraction investigations showed that the films grown were highly crystalline and textured. According to X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry investigations, UVPLD-grown Y2O3 films have a better overall stoichiometry and contain less physisorbed oxygen than the conventional PLD-grown films. The refractive index values, measured in the range 300-750 nm by using variable-angle spectroscopic ellipsometry, were similar to those of a reference Y2O3 film.

Original languageEnglish
Pages (from-to)S535-S538
JournalApplied Physics A: Materials Science and Processing
Issue number7
StatePublished - 1999
Externally publishedYes


Dive into the research topics of 'Low-temperature growth of Y2O3 thin films by Ultraviolet-Assisted Pulsed Laser Deposition'. Together they form a unique fingerprint.

Cite this