Abstract
Thin indium tin oxide (ITO) films were grown on Si substrates held at temperatures 50°C up to 150°C by conventional and in situ ultraviolet-assisted pulsed laser deposition (UVPLD) techniques. Atomic force microscopy and x-ray reflectivity techniques were employed to characterize the surface morphology of the ITO films on both microscopic and macroscopic scales. Roughness values (Rms) below 0.5 nm were routinely achieved on films grown by the UVPLD technique.
| Original language | English |
|---|---|
| Pages (from-to) | 21-25 |
| Number of pages | 5 |
| Journal | Journal of Optoelectronics and Advanced Materials |
| Volume | 4 |
| Issue number | 1 |
| State | Published - Mar 2002 |
| Externally published | Yes |
Keywords
- Indium tin oxide
- Laser ablation
- Roughness
- Transparent and conductive oxides
- Ultraviolet irradiation