TY - JOUR
T1 - Low temperature growth of barium strontium titanate films by ultraviolet-assisted pulsed laser deposition
AU - Craciun, V.
AU - Howard, J. M.
AU - Lambers, E. S.
AU - Singh, R. K.
PY - 2000
Y1 - 2000
N2 - Barium strontium titanate (BST) thin films were grown directly on Si substrates by an in situ ultraviolet (UV)-assisted pulsed laser deposition (UVPLD) technique. With respect to films grown by conventional (i.e. without UV illumination) pulsed laser deposition (PLD), the UVPLD grown films exhibited improved structural and electrical properties. The dielectric constant of a 40-nm thick film deposited at 650 °C was determined to be 281, the leakage current density was approximately 4×10-8 A/cm2 at 100 kV/cm, and the density of interface states at the flat-band voltage was found to be approximately 5.6×1011 eV-1cm-2. X-ray photoelectron spectroscopy investigations found that the surface of the grown films exhibited an additional Ba-containing phase, besides the usual BST perovskite phase, which was likely caused by stress and/or oxygen vacancies. The amount of this new phase was always smaller and very superficial for UVPLD grown films, which can explain their better overall properties.
AB - Barium strontium titanate (BST) thin films were grown directly on Si substrates by an in situ ultraviolet (UV)-assisted pulsed laser deposition (UVPLD) technique. With respect to films grown by conventional (i.e. without UV illumination) pulsed laser deposition (PLD), the UVPLD grown films exhibited improved structural and electrical properties. The dielectric constant of a 40-nm thick film deposited at 650 °C was determined to be 281, the leakage current density was approximately 4×10-8 A/cm2 at 100 kV/cm, and the density of interface states at the flat-band voltage was found to be approximately 5.6×1011 eV-1cm-2. X-ray photoelectron spectroscopy investigations found that the surface of the grown films exhibited an additional Ba-containing phase, besides the usual BST perovskite phase, which was likely caused by stress and/or oxygen vacancies. The amount of this new phase was always smaller and very superficial for UVPLD grown films, which can explain their better overall properties.
UR - http://www.scopus.com/inward/record.url?scp=0034438917&partnerID=8YFLogxK
U2 - 10.1557/proc-617-j3.21
DO - 10.1557/proc-617-j3.21
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AN - SCOPUS:0034438917
SN - 0272-9172
VL - 617
SP - J3211-J3216
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Laser-Solid Interactions for Materials Processing
Y2 - 25 April 2000 through 27 April 2000
ER -