Low temperature device creation in Si via fast Li electromigration

Leonid Chernyak; Vera Lyakhovitskaya; David Cahen

doi:10.1063/1.114107

Low temperature device creation in Si via fast Li electromigration

Leonid Chernyak
, Vera Lyakhovitskaya
, David Cahen

Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Micrometer-sized homojunction structures can be formed by local application of strong electric fields (∼10⁶ V/cm) at ambient temperatures to Si which was homogeneously doped n-type by Li. Such junctions show electroluminesence and two such junctions, arranged back to back, act as transistors, as evidenced by electron beam induced current, current-voltage and capacitance-voltage measurements. These results are explained by thermally-assisted electromigration of Li.

Original language	English
Pages (from-to)	709
Number of pages	1
Journal	Applied Physics Letters
Volume	66
Issue number	6
DOIs	https://doi.org/10.1063/1.114107
State	Published - 1995
Externally published	Yes

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10.1063/1.114107

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title = "Low temperature device creation in Si via fast Li electromigration",

abstract = "Micrometer-sized homojunction structures can be formed by local application of strong electric fields (∼106 V/cm) at ambient temperatures to Si which was homogeneously doped n-type by Li. Such junctions show electroluminesence and two such junctions, arranged back to back, act as transistors, as evidenced by electron beam induced current, current-voltage and capacitance-voltage measurements. These results are explained by thermally-assisted electromigration of Li.",

author = "Leonid Chernyak and Vera Lyakhovitskaya and David Cahen",

year = "1995",

doi = "10.1063/1.114107",

language = "אנגלית",

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journal = "Applied Physics Letters",

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AU - Chernyak, Leonid

AU - Lyakhovitskaya, Vera

AU - Cahen, David

PY - 1995

Y1 - 1995

N2 - Micrometer-sized homojunction structures can be formed by local application of strong electric fields (∼106 V/cm) at ambient temperatures to Si which was homogeneously doped n-type by Li. Such junctions show electroluminesence and two such junctions, arranged back to back, act as transistors, as evidenced by electron beam induced current, current-voltage and capacitance-voltage measurements. These results are explained by thermally-assisted electromigration of Li.

AB - Micrometer-sized homojunction structures can be formed by local application of strong electric fields (∼106 V/cm) at ambient temperatures to Si which was homogeneously doped n-type by Li. Such junctions show electroluminesence and two such junctions, arranged back to back, act as transistors, as evidenced by electron beam induced current, current-voltage and capacitance-voltage measurements. These results are explained by thermally-assisted electromigration of Li.

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SN - 0003-6951

VL - 66

SP - 709

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Low temperature device creation in Si via fast Li electromigration

Abstract

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