TY - JOUR
T1 - Low temperature device creation in Si via fast Li electromigration
AU - Chernyak, Leonid
AU - Lyakhovitskaya, Vera
AU - Cahen, David
PY - 1995
Y1 - 1995
N2 - Micrometer-sized homojunction structures can be formed by local application of strong electric fields (∼106 V/cm) at ambient temperatures to Si which was homogeneously doped n-type by Li. Such junctions show electroluminesence and two such junctions, arranged back to back, act as transistors, as evidenced by electron beam induced current, current-voltage and capacitance-voltage measurements. These results are explained by thermally-assisted electromigration of Li.
AB - Micrometer-sized homojunction structures can be formed by local application of strong electric fields (∼106 V/cm) at ambient temperatures to Si which was homogeneously doped n-type by Li. Such junctions show electroluminesence and two such junctions, arranged back to back, act as transistors, as evidenced by electron beam induced current, current-voltage and capacitance-voltage measurements. These results are explained by thermally-assisted electromigration of Li.
UR - http://www.scopus.com/inward/record.url?scp=36449009464&partnerID=8YFLogxK
U2 - 10.1063/1.114107
DO - 10.1063/1.114107
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:36449009464
SN - 0003-6951
SP - 709
JO - Applied Physics Letters
JF - Applied Physics Letters
ER -