Low temperature device creation in Si via fast Li electromigration

Leonid Chernyak, Vera Lyakhovitskaya, David Cahen

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Micrometer-sized homojunction structures can be formed by local application of strong electric fields (∼106 V/cm) at ambient temperatures to Si which was homogeneously doped n-type by Li. Such junctions show electroluminesence and two such junctions, arranged back to back, act as transistors, as evidenced by electron beam induced current, current-voltage and capacitance-voltage measurements. These results are explained by thermally-assisted electromigration of Li.

Original languageEnglish
Pages (from-to)709
Number of pages1
JournalApplied Physics Letters
StatePublished - 1995
Externally publishedYes


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