Low temperature deposition of patterned TiO2 thin films using photopatterned self-assembled monolayers

Rochael J. Collins; Hyunjung Shin; Mark R. DeGuire; Arthur H. Heuer; Chaim N. Sukenik

doi:10.1063/1.117916

Low temperature deposition of patterned TiO₂ thin films using photopatterned self-assembled monolayers

Rochael J. Collins
, Hyunjung Shin
, Mark R. DeGuire
, Arthur H. Heuer
, Chaim N. Sukenik

Department of Chemistry

Case Western Reserve University

Research output: Contribution to journal › Article › peer-review

135 Scopus citations

Abstract

Patterned thin films of TiO₂ were deposited from aqueous solution onto photopatterned self-assembled monolayer (SAM) films on Si substrates. Regions of the SAM containing sulfonate surface functionality were created by the photo-oxidation of initially deposited thioacetate groups through a mask. The nanocrystalline TiO₂-on-SAM films were deposited selectively on the photolyzed regions of the SAM. The electrical properties of such films were assessed for potential microelectronic device applications. Current-voltage and capacitance-voltage measurements made on nonpatterned TiO₂ films yielded values of relative permittivity ranging from 24 to 57, film resistivities of 1.0-1.5×10⁹ Ω cm and breakdown voltages in excess of 1 MV/cm.

Original language	English
Pages (from-to)	860-862
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	6
DOIs	https://doi.org/10.1063/1.117916
State	Published - 5 Aug 1996

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title = "Low temperature deposition of patterned TiO2 thin films using photopatterned self-assembled monolayers",

abstract = "Patterned thin films of TiO2 were deposited from aqueous solution onto photopatterned self-assembled monolayer (SAM) films on Si substrates. Regions of the SAM containing sulfonate surface functionality were created by the photo-oxidation of initially deposited thioacetate groups through a mask. The nanocrystalline TiO2-on-SAM films were deposited selectively on the photolyzed regions of the SAM. The electrical properties of such films were assessed for potential microelectronic device applications. Current-voltage and capacitance-voltage measurements made on nonpatterned TiO2 films yielded values of relative permittivity ranging from 24 to 57, film resistivities of 1.0-1.5×109 Ω cm and breakdown voltages in excess of 1 MV/cm.",

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AU - Collins, Rochael J.

AU - Shin, Hyunjung

AU - DeGuire, Mark R.

AU - Heuer, Arthur H.

AU - Sukenik, Chaim N.

PY - 1996/8/5

Y1 - 1996/8/5

N2 - Patterned thin films of TiO2 were deposited from aqueous solution onto photopatterned self-assembled monolayer (SAM) films on Si substrates. Regions of the SAM containing sulfonate surface functionality were created by the photo-oxidation of initially deposited thioacetate groups through a mask. The nanocrystalline TiO2-on-SAM films were deposited selectively on the photolyzed regions of the SAM. The electrical properties of such films were assessed for potential microelectronic device applications. Current-voltage and capacitance-voltage measurements made on nonpatterned TiO2 films yielded values of relative permittivity ranging from 24 to 57, film resistivities of 1.0-1.5×109 Ω cm and breakdown voltages in excess of 1 MV/cm.

AB - Patterned thin films of TiO2 were deposited from aqueous solution onto photopatterned self-assembled monolayer (SAM) films on Si substrates. Regions of the SAM containing sulfonate surface functionality were created by the photo-oxidation of initially deposited thioacetate groups through a mask. The nanocrystalline TiO2-on-SAM films were deposited selectively on the photolyzed regions of the SAM. The electrical properties of such films were assessed for potential microelectronic device applications. Current-voltage and capacitance-voltage measurements made on nonpatterned TiO2 films yielded values of relative permittivity ranging from 24 to 57, film resistivities of 1.0-1.5×109 Ω cm and breakdown voltages in excess of 1 MV/cm.

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Low temperature deposition of patterned TiO₂ thin films using photopatterned self-assembled monolayers

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