Abstract
Patterned thin films of TiO2 were deposited from aqueous solution onto photopatterned self-assembled monolayer (SAM) films on Si substrates. Regions of the SAM containing sulfonate surface functionality were created by the photo-oxidation of initially deposited thioacetate groups through a mask. The nanocrystalline TiO2-on-SAM films were deposited selectively on the photolyzed regions of the SAM. The electrical properties of such films were assessed for potential microelectronic device applications. Current-voltage and capacitance-voltage measurements made on nonpatterned TiO2 films yielded values of relative permittivity ranging from 24 to 57, film resistivities of 1.0-1.5×109 Ω cm and breakdown voltages in excess of 1 MV/cm.
Original language | English |
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Pages (from-to) | 860-862 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 6 |
DOIs | |
State | Published - 5 Aug 1996 |