Low temperature deposition of diamond coatings on various substrates

Donald R. Gilbert, Rajiv Singh

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

We have used an electron cyclotron resonance (ECR) plasma system to deposit diamond films at substrate temperatures between 500 and 600°C. A methanol/hydrogen mixture was used as the source gas for deposition based on its inherent C/O atomic ratio. Silicon, sapphire, and stainless steel were evaluated as substrates for low temperature diamond growth.

Original languageEnglish
Pages273-279
Number of pages7
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 124th TMS Annual Meeting - Las Vegas, NV, USA
Duration: 13 Feb 199516 Feb 1995

Conference

ConferenceProceedings of the 1995 124th TMS Annual Meeting
CityLas Vegas, NV, USA
Period13/02/9516/02/95

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