Low-power global/rolling shutter image sensors in silicon on sapphire technology

Alexander Fish, Evgeny Avner, Orly Yadid-Pecht

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

A variety of low-power global shutter (snapshot) and rolling shutter Active Pixel Sensors (APS) in Silicon on Sapphire (SOS) technology are presented. Utilizing the floating gate NMOS photodetector, operating in a lateral bipolar transistor (LBT) mode, the described imagers are expected to achieve high responsivity and are mostly suitable for low-power applications. The proposed global shutter sensors enable imaging of fast moving objects in the field of view. Power dissipation of the proposed imagers is reduced by employing an advanced Gate-Diffusion Input (GDI) technique, used for the sensors digital periphery implementation. A test chip, consisting of four different 32*32 global shutter and rolling shutter image sensor arrays, operating at power supply, ranging from 1.2V to 3V, has been implemented in a Peregrine's 0.5μm SOS technology. System architectures and operation of the presented imagers are discussed, and a comparison with existing APS structures is presented as well.

Original languageEnglish
Article number1464654
Pages (from-to)580-583
Number of pages4
JournalProceedings - IEEE International Symposium on Circuits and Systems
DOIs
StatePublished - 2005
Externally publishedYes
EventIEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan
Duration: 23 May 200526 May 2005

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