TY - JOUR
T1 - Low operating voltage n-channel organic field effect transistor using epoxy based photoresist gate dielectric
AU - Kumar, S.
AU - Pradhan, S.
AU - Dhar, A.
N1 - Publisher Copyright:
© 2014 IOP Publishing Ltd.
PY - 2014/9
Y1 - 2014/9
N2 - We report a systematic study on the dielectric properties of epoxy based positive tone photoresist and its use as a gate dielectric for n-channel organic field effect transistors (OFETs) made with N,N'-Dioctyl-3,4,9,10-perylenedicarboximinde (PTCDI-C8) as the active semiconducting layer. We find that the photoresist has high dielectric constant (κ = 12 at 10 kHz) and thus can be used in fabricating low operating voltage OFET devices. Highly smooth gate dielectric surface was obtained using the photoresist with the highest root mean square (rms) roughness of 0.239 nm for the films annealed at 200 °C. Consequently, the semiconducting layer (on photoresist dielectric annealed at 100 °C) also exhibited highly uniform surface with rms roughness of 0.382 nm. The turn-on voltage (VT), inverse subthreshold slope (S) and saturation mobility of electrons (μsat) of the transistor device were estimated to be 4.3 V, 13Vdecade-1 and 6×10-5 cm2 Vs-1, respectively, when the device was operated in ambient, which is better than some of the earlier reported works under similar experimental conditions.
AB - We report a systematic study on the dielectric properties of epoxy based positive tone photoresist and its use as a gate dielectric for n-channel organic field effect transistors (OFETs) made with N,N'-Dioctyl-3,4,9,10-perylenedicarboximinde (PTCDI-C8) as the active semiconducting layer. We find that the photoresist has high dielectric constant (κ = 12 at 10 kHz) and thus can be used in fabricating low operating voltage OFET devices. Highly smooth gate dielectric surface was obtained using the photoresist with the highest root mean square (rms) roughness of 0.239 nm for the films annealed at 200 °C. Consequently, the semiconducting layer (on photoresist dielectric annealed at 100 °C) also exhibited highly uniform surface with rms roughness of 0.382 nm. The turn-on voltage (VT), inverse subthreshold slope (S) and saturation mobility of electrons (μsat) of the transistor device were estimated to be 4.3 V, 13Vdecade-1 and 6×10-5 cm2 Vs-1, respectively, when the device was operated in ambient, which is better than some of the earlier reported works under similar experimental conditions.
KW - Dielectric
KW - HPR 504-photoresist
KW - Organic field effect transistors
UR - http://www.scopus.com/inward/record.url?scp=84930633996&partnerID=8YFLogxK
U2 - 10.1088/2053-1591/1/3/035103
DO - 10.1088/2053-1591/1/3/035103
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AN - SCOPUS:84930633996
SN - 2053-1591
VL - 1
JO - Materials Research Express
JF - Materials Research Express
IS - 3
M1 - 035103
ER -