Low-Cost Solution-Processed Facile h-MoO3/n-Si Heterojunction Diode

Surendra Kumar; Kamal Rudra; Abhishek Kumar Singh; Sanjai Singh; Pramod Kumar

doi:10.1109/nano58406.2023.10231289

Low-Cost Solution-Processed Facile h-MoO₃/n-Si Heterojunction Diode

Surendra Kumar, Kamal Rudra, Abhishek Kumar Singh, Sanjai Singh, Pramod Kumar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In beginning of 21st century, it started witnessing the growth and widespread of 1D nanorod transition metal oxides for solid states & optoelectronic devices. These transition metal oxides with doped silicon offer an excellent heterojunction property with peculiar electrical and optical properties. Owing to such peculiarities, this article investigated the electrical behavior of n-Si and chemically synthesized h-MoO3 nanorods followed by solution processed. The synthesis of h-MoO3 nanorods has been carried out in cost effective manner. The characterization results of Field Emission Electron Microscopy (FESEM) and X-ray diffraction (XRD) results have shown the morphology, phase, and crystallinity of h-MoO3 nanorods. The optical properties were examined using UV-Visible and Raman spectra analysis. Subsequently, we have further investigated the h-MoO3/n-Si heterojunction diode and studied their electrical properties. The current-voltage (I-V) measurements of the heterojunction were carried out at room temperature which shows a rectifying behavior with a rectification ratio of ≈13. This facile fabrication process paves the way for various low-cost applications, especially in the field of sensing and photonics.

Original language	English
Title of host publication	2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023
Publisher	IEEE Computer Society
Pages	494-498
Number of pages	5
ISBN (Electronic)	9798350333466
DOIs	https://doi.org/10.1109/nano58406.2023.10231289
State	Published - 2023
Externally published	Yes
Event	23rd IEEE International Conference on Nanotechnology, NANO 2023 - Jeju City, Korea, Republic of Duration: 2 Jul 2023 → 5 Jul 2023

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2023-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	23rd IEEE International Conference on Nanotechnology, NANO 2023
Country/Territory	Korea, Republic of
City	Jeju City
Period	2/07/23 → 5/07/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Funding

Research supported by DST and CSTUP India. Surendra Kumar is with the Department of Electronics and Communications, Indian Institute of Information Technology-Allahabad, Prayagraj, 211015, India Kamal Rudra is with Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, 48109, U.S. Dr. Abhsihek Kumar Singh is with Department of Electronics Engineering, Rajiv Gandhi Institute of Petroleum Technology, Amethi, 229305, India.(e-mail: [email protected])

Funders	Funder number
CSTUP
Department of Science and Technology, Ministry of Science and Technology, India

Access to Document

10.1109/nano58406.2023.10231289

Cite this

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title = "Low-Cost Solution-Processed Facile h-MoO3/n-Si Heterojunction Diode",

abstract = "In beginning of 21st century, it started witnessing the growth and widespread of 1D nanorod transition metal oxides for solid states & optoelectronic devices. These transition metal oxides with doped silicon offer an excellent heterojunction property with peculiar electrical and optical properties. Owing to such peculiarities, this article investigated the electrical behavior of n-Si and chemically synthesized h-MoO3 nanorods followed by solution processed. The synthesis of h-MoO3 nanorods has been carried out in cost effective manner. The characterization results of Field Emission Electron Microscopy (FESEM) and X-ray diffraction (XRD) results have shown the morphology, phase, and crystallinity of h-MoO3 nanorods. The optical properties were examined using UV-Visible and Raman spectra analysis. Subsequently, we have further investigated the h-MoO3/n-Si heterojunction diode and studied their electrical properties. The current-voltage (I-V) measurements of the heterojunction were carried out at room temperature which shows a rectifying behavior with a rectification ratio of ≈13. This facile fabrication process paves the way for various low-cost applications, especially in the field of sensing and photonics.",

author = "Surendra Kumar and Kamal Rudra and Singh, {Abhishek Kumar} and Sanjai Singh and Pramod Kumar",

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Kumar, S, Rudra, K, Singh, AK, Singh, S & Kumar, P 2023, Low-Cost Solution-Processed Facile h-MoO₃/n-Si Heterojunction Diode. in 2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023. Proceedings of the IEEE Conference on Nanotechnology, vol. 2023-July, IEEE Computer Society, pp. 494-498, 23rd IEEE International Conference on Nanotechnology, NANO 2023, Jeju City, Korea, Republic of, 2/07/23. https://doi.org/10.1109/nano58406.2023.10231289

Low-Cost Solution-Processed Facile h-MoO₃/n-Si Heterojunction Diode. / Kumar, Surendra; Rudra, Kamal; Singh, Abhishek Kumar et al.
2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023. IEEE Computer Society, 2023. p. 494-498 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2023-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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