Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

Anupama Yadav; Elena Flitsiyan; Leonid Chernyak; Ya Hsi Hwang; Yueh Ling Hsieh; Lei Lei; Fan Ren; Stephen J. Pearton; Igor Lubomirsky

doi:10.1080/10420150.2015.1010170

Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

Anupama Yadav, Elena Flitsiyan, Leonid Chernyak, Ya Hsi Hwang, Yueh Ling Hsieh, Lei Lei, Fan Ren, Stephen J. Pearton, Igor Lubomirsky

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

To understand the effects of ⁶⁰Co gamma-irradiation, systematic studies were carried out on n-channel AlGaN/GaN high electron mobility transistors. Electrical testing, combined with electron beam-induced current measurements, was able to provide critical information on defects induced in the material as a result of gamma-irradiation. It was shown that at low gamma-irradiation doses, the minority carrier diffusion length in AlGaN/GaN exhibits an increase up to ∼300Gy. The observed effect is due to longer minority carrier (hole) life time in the material's valence band as a result of an internal electron irradiation by Compton electrons. However, for larger doses of gamma irradiation (above 400Gy), deteriorations in transport properties and device characteristics were observed. This is consistent with the higher density of deep traps in the material's forbidden gap induced by a larger dose of gamma-irradiation. Moderate annealing of device structures at 200°C for 25min resulted in partial recovery of transport properties and device performance.

Original language	English
Pages (from-to)	377-385
Number of pages	9
Journal	Radiation Effects and Defects in Solids
Volume	170
Issue number	5
DOIs	https://doi.org/10.1080/10420150.2015.1010170
State	Published - 4 May 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2015 © 2015 Taylor & Francis.

Funding

UCF and WIS research was partially supported by NATO SfP award # 9844662. The work performed at UF is supported by an U.S. DOD HDTRA Grant No. 1-11-1-0020, monitored by Dr. James Reed.

Funders	Funder number
U.S. DOD	1-11-1-0020
North Atlantic Treaty Organization	9844662
University of Florida

Keywords

Activation energy
Diffusion length
Gamma irradiation
High electron mobility transistors
Wide-band-gap semiconductors

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10.1080/10420150.2015.1010170

Cite this

Yadav, A., Flitsiyan, E., Chernyak, L., Hwang, Y. H., Hsieh, Y. L., Lei, L., Ren, F., Pearton, S. J., & Lubomirsky, I. (2015). Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors. Radiation Effects and Defects in Solids, 170(5), 377-385. https://doi.org/10.1080/10420150.2015.1010170

@article{e6a3b7581c54402ea98539b80bfc7289,

title = "Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors",

abstract = "To understand the effects of 60Co gamma-irradiation, systematic studies were carried out on n-channel AlGaN/GaN high electron mobility transistors. Electrical testing, combined with electron beam-induced current measurements, was able to provide critical information on defects induced in the material as a result of gamma-irradiation. It was shown that at low gamma-irradiation doses, the minority carrier diffusion length in AlGaN/GaN exhibits an increase up to ∼300Gy. The observed effect is due to longer minority carrier (hole) life time in the material's valence band as a result of an internal electron irradiation by Compton electrons. However, for larger doses of gamma irradiation (above 400Gy), deteriorations in transport properties and device characteristics were observed. This is consistent with the higher density of deep traps in the material's forbidden gap induced by a larger dose of gamma-irradiation. Moderate annealing of device structures at 200°C for 25min resulted in partial recovery of transport properties and device performance.",

keywords = "Activation energy, Diffusion length, Gamma irradiation, High electron mobility transistors, Wide-band-gap semiconductors",

author = "Anupama Yadav and Elena Flitsiyan and Leonid Chernyak and Hwang, {Ya Hsi} and Hsieh, {Yueh Ling} and Lei Lei and Fan Ren and Pearton, {Stephen J.} and Igor Lubomirsky",

note = "Publisher Copyright: {\textcopyright} 2015 {\textcopyright} 2015 Taylor & Francis.",

year = "2015",

month = may,

day = "4",

doi = "10.1080/10420150.2015.1010170",

language = "אנגלית",

volume = "170",

pages = "377--385",

journal = "Radiation Effects and Defects in Solids",

issn = "1042-0150",

publisher = "Taylor and Francis Ltd.",

number = "5",

}

Yadav, A, Flitsiyan, E, Chernyak, L, Hwang, YH, Hsieh, YL, Lei, L, Ren, F, Pearton, SJ & Lubomirsky, I 2015, 'Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors', Radiation Effects and Defects in Solids, vol. 170, no. 5, pp. 377-385. https://doi.org/10.1080/10420150.2015.1010170

TY - JOUR

T1 - Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

AU - Yadav, Anupama

AU - Flitsiyan, Elena

AU - Chernyak, Leonid

AU - Hwang, Ya Hsi

AU - Hsieh, Yueh Ling

AU - Lei, Lei

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Lubomirsky, Igor

PY - 2015/5/4

Y1 - 2015/5/4

N2 - To understand the effects of 60Co gamma-irradiation, systematic studies were carried out on n-channel AlGaN/GaN high electron mobility transistors. Electrical testing, combined with electron beam-induced current measurements, was able to provide critical information on defects induced in the material as a result of gamma-irradiation. It was shown that at low gamma-irradiation doses, the minority carrier diffusion length in AlGaN/GaN exhibits an increase up to ∼300Gy. The observed effect is due to longer minority carrier (hole) life time in the material's valence band as a result of an internal electron irradiation by Compton electrons. However, for larger doses of gamma irradiation (above 400Gy), deteriorations in transport properties and device characteristics were observed. This is consistent with the higher density of deep traps in the material's forbidden gap induced by a larger dose of gamma-irradiation. Moderate annealing of device structures at 200°C for 25min resulted in partial recovery of transport properties and device performance.

AB - To understand the effects of 60Co gamma-irradiation, systematic studies were carried out on n-channel AlGaN/GaN high electron mobility transistors. Electrical testing, combined with electron beam-induced current measurements, was able to provide critical information on defects induced in the material as a result of gamma-irradiation. It was shown that at low gamma-irradiation doses, the minority carrier diffusion length in AlGaN/GaN exhibits an increase up to ∼300Gy. The observed effect is due to longer minority carrier (hole) life time in the material's valence band as a result of an internal electron irradiation by Compton electrons. However, for larger doses of gamma irradiation (above 400Gy), deteriorations in transport properties and device characteristics were observed. This is consistent with the higher density of deep traps in the material's forbidden gap induced by a larger dose of gamma-irradiation. Moderate annealing of device structures at 200°C for 25min resulted in partial recovery of transport properties and device performance.

KW - Activation energy

KW - Diffusion length

KW - Gamma irradiation

KW - High electron mobility transistors

KW - Wide-band-gap semiconductors

UR - http://www.scopus.com/inward/record.url?scp=84940714068&partnerID=8YFLogxK

U2 - 10.1080/10420150.2015.1010170

DO - 10.1080/10420150.2015.1010170

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:84940714068

SN - 1042-0150

VL - 170

SP - 377

EP - 385

JO - Radiation Effects and Defects in Solids

JF - Radiation Effects and Defects in Solids

IS - 5

ER -

Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

Abstract

Bibliographical note

Funding

Keywords

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