TY - JOUR
T1 - Longitudinal resistivity in the quantum Hall effect regime in a split-gate Si MOSFET with variable electron density
AU - Shlimak, I.
AU - Friedland, K. J.
AU - Kravchenko, S. V.
AU - Ginodman, V.
AU - Butenko, A.
AU - Klapwijk, T. M.
PY - 2008
Y1 - 2008
N2 - Longitudinal resistivity in the quantum Hall effect regime was measured in a Si MOSFET sample in which split-gate allows to vary the electron density and filling factor in different parts of the sample. In case of equal gate voltages on both sides of the split, the resistance, measured across the split in zero and weak magnetic fields, is larger due to electron scattering by split-induced potential barrier. However, in strong magnetic fields, the additional resistance disappears because the current flows mostly via the edge channels along the equipotential curves. In case of different gate voltages, the longitudinal resistance is different for opposite sides of the sample because the Hall voltage difference is added only to one side of the sample depending on the sign of the gradient of gate voltages and magnetic field direction. An increase of longitudinal resistance was observed when electrons across the split occupy Landau levels with opposite spin orientation.
AB - Longitudinal resistivity in the quantum Hall effect regime was measured in a Si MOSFET sample in which split-gate allows to vary the electron density and filling factor in different parts of the sample. In case of equal gate voltages on both sides of the split, the resistance, measured across the split in zero and weak magnetic fields, is larger due to electron scattering by split-induced potential barrier. However, in strong magnetic fields, the additional resistance disappears because the current flows mostly via the edge channels along the equipotential curves. In case of different gate voltages, the longitudinal resistance is different for opposite sides of the sample because the Hall voltage difference is added only to one side of the sample depending on the sign of the gradient of gate voltages and magnetic field direction. An increase of longitudinal resistance was observed when electrons across the split occupy Landau levels with opposite spin orientation.
UR - http://www.scopus.com/inward/record.url?scp=77951265257&partnerID=8YFLogxK
U2 - 10.1002/pssc.200777585
DO - 10.1002/pssc.200777585
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AN - SCOPUS:77951265257
SN - 1862-6351
VL - 5
SP - 839
EP - 841
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 3
T2 - 12th International Conference on Transport in Interacting Disordered Systems, TIDS 12
Y2 - 6 August 2007 through 10 August 2007
ER -