Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors

I. Shlimak; V. Ginodman; M. Levin; M. Potemski; K. Maude; K. J. Friedland; J. Paul

doi:10.1103/PhysRevB.68.075321

Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors

I. Shlimak
, V. Ginodman
, M. Levin
, M. Potemski
, K. Maude
, K. J. Friedland
, J. Paul

Department of Physics - at Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have investigated temperature dependence of the longitudinal conductivity σ_xx at integer filling factors ν=i for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd i, when the Fermi level E_F is situated between the valley-split levels, Δσ_xx is determined by quantum corrections to conductivity caused by the electron-electron interaction: Δσ_xx(T)∼ln T. For even i, when E_F is located between cyclotron-split levels or spin-split levels, σ_xx∼exp[-Δ_i/T] for i=6,10,12 and ∼exp[-(T_0i/T)]^1/2 for i=4,8. For further decrease of T, all dependences σ_xx(T) tend to almost temperature-independent residual conductivity σ_i(0). A possible mechanism for σ_i(0) is discussed.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	68
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.68.075321
State	Published - 2003

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title = "Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors",

abstract = "We have investigated temperature dependence of the longitudinal conductivity σxx at integer filling factors ν=i for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd i, when the Fermi level EF is situated between the valley-split levels, Δσxx is determined by quantum corrections to conductivity caused by the electron-electron interaction: Δσxx(T)∼ln T. For even i, when EF is located between cyclotron-split levels or spin-split levels, σxx∼exp[-Δi/T] for i=6,10,12 and ∼exp[-(T0i/T)]1/2 for i=4,8. For further decrease of T, all dependences σxx(T) tend to almost temperature-independent residual conductivity σi(0). A possible mechanism for σi(0) is discussed.",

author = "I. Shlimak and V. Ginodman and M. Levin and M. Potemski and K. Maude and Friedland, \{K. J.\} and J. Paul",

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doi = "10.1103/PhysRevB.68.075321",

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TY - JOUR

T1 - Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors

AU - Shlimak, I.

AU - Ginodman, V.

AU - Levin, M.

AU - Potemski, M.

AU - Maude, K.

AU - Friedland, K. J.

AU - Paul, J.

PY - 2003

Y1 - 2003

N2 - We have investigated temperature dependence of the longitudinal conductivity σxx at integer filling factors ν=i for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd i, when the Fermi level EF is situated between the valley-split levels, Δσxx is determined by quantum corrections to conductivity caused by the electron-electron interaction: Δσxx(T)∼ln T. For even i, when EF is located between cyclotron-split levels or spin-split levels, σxx∼exp[-Δi/T] for i=6,10,12 and ∼exp[-(T0i/T)]1/2 for i=4,8. For further decrease of T, all dependences σxx(T) tend to almost temperature-independent residual conductivity σi(0). A possible mechanism for σi(0) is discussed.

AB - We have investigated temperature dependence of the longitudinal conductivity σxx at integer filling factors ν=i for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd i, when the Fermi level EF is situated between the valley-split levels, Δσxx is determined by quantum corrections to conductivity caused by the electron-electron interaction: Δσxx(T)∼ln T. For even i, when EF is located between cyclotron-split levels or spin-split levels, σxx∼exp[-Δi/T] for i=6,10,12 and ∼exp[-(T0i/T)]1/2 for i=4,8. For further decrease of T, all dependences σxx(T) tend to almost temperature-independent residual conductivity σi(0). A possible mechanism for σi(0) is discussed.

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VL - 68

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 7

ER -

Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors

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