Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors

I. Shlimak, V. Ginodman, M. Levin, M. Potemski, K. Maude, K. J. Friedland, J. Paul

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We have investigated temperature dependence of the longitudinal conductivity σxx at integer filling factors ν=i for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd i, when the Fermi level EF is situated between the valley-split levels, Δσxx is determined by quantum corrections to conductivity caused by the electron-electron interaction: Δσxx(T)∼ln T. For even i, when EF is located between cyclotron-split levels or spin-split levels, σxx∼exp[-Δi/T] for i=6,10,12 and ∼exp[-(T0i/T)]1/2 for i=4,8. For further decrease of T, all dependences σxx(T) tend to almost temperature-independent residual conductivity σi(0). A possible mechanism for σi(0) is discussed.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number7
StatePublished - 2003


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