TY - JOUR
T1 - Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors
AU - Shlimak, I.
AU - Ginodman, V.
AU - Levin, M.
AU - Potemski, M.
AU - Maude, K.
AU - Friedland, K. J.
AU - Paul, J.
PY - 2003
Y1 - 2003
N2 - We have investigated temperature dependence of the longitudinal conductivity σxx at integer filling factors ν=i for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd i, when the Fermi level EF is situated between the valley-split levels, Δσxx is determined by quantum corrections to conductivity caused by the electron-electron interaction: Δσxx(T)∼ln T. For even i, when EF is located between cyclotron-split levels or spin-split levels, σxx∼exp[-Δi/T] for i=6,10,12 and ∼exp[-(T0i/T)]1/2 for i=4,8. For further decrease of T, all dependences σxx(T) tend to almost temperature-independent residual conductivity σi(0). A possible mechanism for σi(0) is discussed.
AB - We have investigated temperature dependence of the longitudinal conductivity σxx at integer filling factors ν=i for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd i, when the Fermi level EF is situated between the valley-split levels, Δσxx is determined by quantum corrections to conductivity caused by the electron-electron interaction: Δσxx(T)∼ln T. For even i, when EF is located between cyclotron-split levels or spin-split levels, σxx∼exp[-Δi/T] for i=6,10,12 and ∼exp[-(T0i/T)]1/2 for i=4,8. For further decrease of T, all dependences σxx(T) tend to almost temperature-independent residual conductivity σi(0). A possible mechanism for σi(0) is discussed.
UR - http://www.scopus.com/inward/record.url?scp=0141515394&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.68.075321
DO - 10.1103/PhysRevB.68.075321
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AN - SCOPUS:0141515394
SN - 1098-0121
VL - 68
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 7
ER -