Long lived photoexcited electron-hole pairs in modulation doped GaAs/AlGaAs quantum wells studied by intersubband spectroscopy

Y. Garini; E. Ehrenfreund; E. Cohen; Arza Ron; K. K. Law; J. L. Merz; A. C. Gossard

doi:10.1016/0038-1101(94)90388-3

Long lived photoexcited electron-hole pairs in modulation doped GaAs/AlGaAs quantum wells studied by intersubband spectroscopy

Y. Garini, E. Ehrenfreund, E. Cohen, Arza Ron, K. K. Law, J. L. Merz, A. C. Gossard

Research output: Contribution to journal › Article › peer-review

Abstract

We present a study of the e1-e2 intersubband absorption in modulation doped GaAs/Al_0.3Ga_0.7As MQW's that are photoexcited by interband radiation. A comprehensive study of the photoinduced absorption (PIA) strength as a function of exciting (laser) intensity and modulation frequency indicates that only a subgroup of the photoexcited electrons contribute to the PIA. These electrons are long lived in MQW's with a 2DEG density in the range of 1-×10¹⁰ cm^-2. The existence of long lived electrons is explained by a model based on localized, photoexcited holes, that have a reduced radiative recombination rate with the 2DEG. We calculate this recombination rate and show that it is much longer than that of free electrons and holes.

Original language	English
Pages (from-to)	1199-1202
Number of pages	4
Journal	Solid-State Electronics
Volume	37
Issue number	4-6
DOIs	https://doi.org/10.1016/0038-1101(94)90388-3
State	Published - 1994
Externally published	Yes

Bibliographical note

Funding Information:
Acknowledgements--The work at the Technion was supported by the US-Israel Binational Science Foundation (BSF), Jerusalem, Israel, and was carried out in the Center for Advanced Opto-electronics. The work at UCSB was supported by the National Science Foundation Science and Technology Center, QUEST.

Funding

Acknowledgements--The work at the Technion was supported by the US-Israel Binational Science Foundation (BSF), Jerusalem, Israel, and was carried out in the Center for Advanced Opto-electronics. The work at UCSB was supported by the National Science Foundation Science and Technology Center, QUEST.

Funders	Funder number
National Science Foundation Science and Technology Center
QUEST
US-Israel Binational Science Foundation
United States-Israel Binational Science Foundation

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title = "Long lived photoexcited electron-hole pairs in modulation doped GaAs/AlGaAs quantum wells studied by intersubband spectroscopy",

abstract = "We present a study of the e1-e2 intersubband absorption in modulation doped GaAs/Al0.3Ga0.7As MQW's that are photoexcited by interband radiation. A comprehensive study of the photoinduced absorption (PIA) strength as a function of exciting (laser) intensity and modulation frequency indicates that only a subgroup of the photoexcited electrons contribute to the PIA. These electrons are long lived in MQW's with a 2DEG density in the range of 1-×1010 cm-2. The existence of long lived electrons is explained by a model based on localized, photoexcited holes, that have a reduced radiative recombination rate with the 2DEG. We calculate this recombination rate and show that it is much longer than that of free electrons and holes.",

author = "Y. Garini and E. Ehrenfreund and E. Cohen and Arza Ron and Law, {K. K.} and Merz, {J. L.} and Gossard, {A. C.}",

note = "Funding Information: Acknowledgements--The work at the Technion was supported by the US-Israel Binational Science Foundation (BSF), Jerusalem, Israel, and was carried out in the Center for Advanced Opto-electronics. The work at UCSB was supported by the National Science Foundation Science and Technology Center, QUEST.",

year = "1994",

doi = "10.1016/0038-1101(94)90388-3",

language = "אנגלית",

volume = "37",

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AU - Garini, Y.

AU - Ehrenfreund, E.

AU - Cohen, E.

AU - Ron, Arza

AU - Law, K. K.

AU - Merz, J. L.

AU - Gossard, A. C.

N1 - Funding Information: Acknowledgements--The work at the Technion was supported by the US-Israel Binational Science Foundation (BSF), Jerusalem, Israel, and was carried out in the Center for Advanced Opto-electronics. The work at UCSB was supported by the National Science Foundation Science and Technology Center, QUEST.

PY - 1994

Y1 - 1994

N2 - We present a study of the e1-e2 intersubband absorption in modulation doped GaAs/Al0.3Ga0.7As MQW's that are photoexcited by interband radiation. A comprehensive study of the photoinduced absorption (PIA) strength as a function of exciting (laser) intensity and modulation frequency indicates that only a subgroup of the photoexcited electrons contribute to the PIA. These electrons are long lived in MQW's with a 2DEG density in the range of 1-×1010 cm-2. The existence of long lived electrons is explained by a model based on localized, photoexcited holes, that have a reduced radiative recombination rate with the 2DEG. We calculate this recombination rate and show that it is much longer than that of free electrons and holes.

AB - We present a study of the e1-e2 intersubband absorption in modulation doped GaAs/Al0.3Ga0.7As MQW's that are photoexcited by interband radiation. A comprehensive study of the photoinduced absorption (PIA) strength as a function of exciting (laser) intensity and modulation frequency indicates that only a subgroup of the photoexcited electrons contribute to the PIA. These electrons are long lived in MQW's with a 2DEG density in the range of 1-×1010 cm-2. The existence of long lived electrons is explained by a model based on localized, photoexcited holes, that have a reduced radiative recombination rate with the 2DEG. We calculate this recombination rate and show that it is much longer than that of free electrons and holes.

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Long lived photoexcited electron-hole pairs in modulation doped GaAs/AlGaAs quantum wells studied by intersubband spectroscopy

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