Logarithmic corrections to two-dimensional transport in silicon inversion layers

M. J. Uren, R. A. Davies, M. Kaveh, M. Pepper

Research output: Contribution to journalArticlepeer-review

81 Scopus citations

Abstract

It is shown that the logarithmic corrections to the two-dimensional conductance arise from both interaction and incipient localisation effects. A transition between these two type of behaviour can be achieved by a change of electron temperature in the presence of a magnetic field, or just by the application of a magnetic field. The magnetic field suppresses the weak localisation and enhances the effects of the interaction. Results on conductance, magnetoconductance and Hall effect are presented and discussed.

Original languageEnglish
Article number015
Pages (from-to)5737-5762
Number of pages26
JournalJournal of Physics Condensed Matter
Volume14
Issue number36
DOIs
StatePublished - 1981
Externally publishedYes

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