Localization of Charge Carriers in Monolayer Graphene Gradually Disordered by Ion Irradiation

Erez Zion; Avner Haran; Alexander Butenko; Leonid Wolfson; Yuri Kaganovskii; Tal Havdala; Amos Sharoni; Doron Naveh; Vladmir Richter; Moshe Kaveh; Eugene Kogan; Issai Shlimak

doi:10.4236/graphene.2015.43005

Localization of Charge Carriers in Monolayer Graphene Gradually Disordered by Ion Irradiation

Erez Zion, Avner Haran, Alexander Butenko, Leonid Wolfson, Yuri Kaganovskii, Tal Havdala, Amos Sharoni, Doron Naveh, Vladmir Richter, Moshe Kaveh, Eugene Kogan, Issai Shlimak

Department of Physics

Technion-Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data.

Original language	English
Pages (from-to)	45-53
Number of pages	9
Journal	Graphene
Volume	4
Issue number	3
DOIs	https://doi.org/10.4236/graphene.2015.43005
State	Published - Jul 2015

Keywords

Graphene
Localization
Hopping conductivity
Ion irradiation

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10.4236/graphene.2015.43005

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abstract = "Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data.",

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AU - Zion, Erez

AU - Haran, Avner

AU - Butenko, Alexander

AU - Wolfson, Leonid

AU - Kaganovskii, Yuri

AU - Havdala, Tal

AU - Sharoni, Amos

AU - Naveh, Doron

AU - Richter, Vladmir

AU - Kaveh, Moshe

AU - Kogan, Eugene

AU - Shlimak, Issai

PY - 2015/7

Y1 - 2015/7

N2 - Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data.

AB - Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data.

KW - Graphene

KW - Localization

KW - Hopping conductivity

KW - Ion irradiation

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Localization of Charge Carriers in Monolayer Graphene Gradually Disordered by Ion Irradiation

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Keywords

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