Abstract
The localization correction to the conductivity of thin Bi films has been measured as a function of the angle between the magnetic field and the film plane. This dependence is well given by the weak localization theory and permits the wave function phase relaxation time τφ{symbol} to be found. Comparison of the experimental τφ{symbol} for Bi and Sb films with those calculated for the electron-electron interaction in quasi-two-dimensional disordered systems suggests that it is the main mechanism of inelastic scattering in Bi and Sb films at low temperatures.
| Original language | English |
|---|---|
| Pages (from-to) | 347-349 |
| Number of pages | 3 |
| Journal | Solid State Communications |
| Volume | 53 |
| Issue number | 4 |
| DOIs | |
| State | Published - Jan 1985 |
| Externally published | Yes |
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