Abstract
Localization and dephasing of conduction electrons in a low carrier density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the "mobility edge , which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the "mobility edge" crosses the Fermi energy a large and sharp change of conductivity is observed. The theory provides an explanation for the observed temperature dependence of conductivity in ferromagnetic semiconductors and manganite pyrochlores.
| Original language | English |
|---|---|
| Pages (from-to) | 373-376 |
| Number of pages | 4 |
| Journal | European Physical Journal B |
| Volume | 9 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1 Jun 1999 |
Bibliographical note
Funding Information:This research was supported by The Israel Science Foundation founded by The Israel Academy of Sciences and Humanities.
Funding
This research was supported by The Israel Science Foundation founded by The Israel Academy of Sciences and Humanities.
| Funders | Funder number |
|---|---|
| Israel Academy of Sciences and Humanities | |
| Israel Science Foundation |
Keywords
- 72.10.-d Theory of electronic transport; scattering mechanisms
- 72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations
- 75.50.Pp Magnetic semiconductors
- 75.70.Pa Giant magnetoresistance