Localization and dephasing driven by magnetic fluctuations in colossal magnetoresistance materials

Eugene Kogan, Mark Auslender, Moshe Kaveh

Research output: Contribution to journalArticlepeer-review

Abstract

Localization and dephasing of conduction electrons in a low-carrier-density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the `mobility edge', which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the `mobility edge' crosses the Fermi energy a large and sharp change of conductivity is observed. The theory provides an explanation for the observed temperature dependence of conductivity in ferromagnetic semiconductors and manganite pyrochlores.

Original languageEnglish
Pages (from-to)374-379
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume9
Issue number3
DOIs
StatePublished - Mar 2001

Bibliographical note

Funding Information:
This research was supported by The Israel Science Foundation founded by The Israel Academy of Sciences and Humanities.

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