Localization and dephasing driven by magnetic fluctuations in colossal magnetoresistance materials

Eugene Kogan, Mark Auslender, Moshe Kaveh

Research output: Contribution to journalArticlepeer-review

Abstract

Localization and dephasing of conduction electrons in a low-carrier-density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the `mobility edge', which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the `mobility edge' crosses the Fermi energy a large and sharp change of conductivity is observed. The theory provides an explanation for the observed temperature dependence of conductivity in ferromagnetic semiconductors and manganite pyrochlores.

Original languageEnglish
Pages (from-to)374-379
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume9
Issue number3
DOIs
StatePublished - Mar 2001

Bibliographical note

Funding Information:
This research was supported by The Israel Science Foundation founded by The Israel Academy of Sciences and Humanities.

Funding

This research was supported by The Israel Science Foundation founded by The Israel Academy of Sciences and Humanities.

FundersFunder number
Israel Academy of Sciences and Humanities
Israel Science Foundation

    Fingerprint

    Dive into the research topics of 'Localization and dephasing driven by magnetic fluctuations in colossal magnetoresistance materials'. Together they form a unique fingerprint.

    Cite this