Liquid Phase Exfoliated 2-D MoS2-Based Broadband Heterojunction Low-Powered Photosensor

Surendra Kumar, Vidushi Gautam, Abhishek Kumar Singh, Gyanendra Kumar Maurya, Sanjai Singh, Pramod Kumar

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Researchers are facing a strong reverse thrust toward the exfoliation of 2-D materials at a large scale. These limitations restrict so many intensively needed applications. We have demonstrated chemically exfoliated MoS2 nanosheets-assisted photosensor examined for low-incident optical power ( 3.78 μ W ) and bias voltage -0.5 to +0.5 V.X-ray diffraction (XRD) results show no secondary peaks that neglect the presence of any impurity in the synthesized MoS2. The high-resolution scanning electron microscopy (HR-SEM) shows synthesized flower-like MoS2 nanosheets. Exfoliation of MoS2 nanosheets was carried out in N , N -methyl di-pyridine (NMP), a suitable solvent to develop single to few-layer MoS2 nanoflakes. During probe sonication, a low-temperature outer atmosphere arrangement has been ensured by using an ice bath. Sonicated solution has been centrifuged at 12 000 rpm, and the supernatant was collected and drop cast over a p-type (1,0,0) rectangular silicon wafer. Ohmic aluminum (Al) contact has been established. Current and voltage characteristics were performed to study the electrical behavior of fabricated p-Si and synthesized MoS2 heterostructure. The rectification ratio was ≈5800 achieved at ±2 V and the ideality factor was obtained 2.06 in the best-fitted region. The maximum responsivity and detectivity of 14.7 A/W and 2.25 jones were obtained at 300-nm wavelengths corresponding at low bias voltage of -0.5 V.

Original languageEnglish
Pages (from-to)1149-1155
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number3
StatePublished - 1 Mar 2023
Externally publishedYes

Bibliographical note

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  • 2-D
  • MoS
  • X-ray diffraction (XRD)
  • aluminum (Al)
  • exfoliation
  • ideality factor
  • low power detector


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