Linear magneto-resistance in Bi2SeTe2 topological insulator

E. P. Amaladass; Shilpam Sharma; T. R. Devidas; Awadhesh Mani

doi:10.1063/1.4948066

Linear magneto-resistance in Bi₂SeTe₂ topological insulator

E. P. Amaladass, Shilpam Sharma, T. R. Devidas, Awadhesh Mani

Indira Gandhi Centre for Atomic Research

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Magnetic field and temperature dependent electronic transport measurements have been carried out on Bi₂SeTe₂ topological insulator single crystals. The measurements reveal an insulating behavior and the carriers were found to be electrons (n-type) from Hall measurement. Magneto-resistance (MR) measurements in the field range (B) of 15 T to -15 T carried out at 4.2 K showed a cusp like weak anti-localization behavior for lower fields (-5T<B<5T) and a parabolic field dependent for B > 5T. Upon increasing temperature, MR transforms to linear dependence of B at 40, 50 and 100 K. On further increasing temperatures (> 200K), a parabolic MR is observed. Temperature dependent Hall data also showed a transition from a nonlinear to linear behavior upon increasing temperatures. Disorder induced changes in the electronic transport characteristics of bulk and surface electrons are believed to cause such changes in the magneto-transport behavior of this system.

Original language	English
Title of host publication	DAE Solid State Physics Symposium 2015
Editors	R. Chitra, Shovit Bhattacharya, N. K. Sahoo
Publisher	American Institute of Physics Inc.
ISBN (Electronic)	9780735413788
DOIs	https://doi.org/10.1063/1.4948066
State	Published - 23 May 2016
Externally published	Yes
Event	60th DAE Solid State Physics Symposium 2015 - Noida, Uttar Pradesh, India Duration: 21 Dec 2015 → 25 Dec 2015

Publication series

Name	AIP Conference Proceedings
Volume	1731
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	60th DAE Solid State Physics Symposium 2015
Country/Territory	India
City	Noida, Uttar Pradesh
Period	21/12/15 → 25/12/15

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

Keywords

Disorders
Linear-Magneto resistance
Magneto-resistance
Topological insulator

Access to Document

10.1063/1.4948066

Cite this

@inproceedings{f823a5099ded46ba88fa71558b0ddc11,

title = "Linear magneto-resistance in Bi2SeTe2 topological insulator",

abstract = "Magnetic field and temperature dependent electronic transport measurements have been carried out on Bi2SeTe2 topological insulator single crystals. The measurements reveal an insulating behavior and the carriers were found to be electrons (n-type) from Hall measurement. Magneto-resistance (MR) measurements in the field range (B) of 15 T to -15 T carried out at 4.2 K showed a cusp like weak anti-localization behavior for lower fields (-5T 5T. Upon increasing temperature, MR transforms to linear dependence of B at 40, 50 and 100 K. On further increasing temperatures (> 200K), a parabolic MR is observed. Temperature dependent Hall data also showed a transition from a nonlinear to linear behavior upon increasing temperatures. Disorder induced changes in the electronic transport characteristics of bulk and surface electrons are believed to cause such changes in the magneto-transport behavior of this system.",

keywords = "Disorders, Linear-Magneto resistance, Magneto-resistance, Topological insulator",

author = "Amaladass, {E. P.} and Shilpam Sharma and Devidas, {T. R.} and Awadhesh Mani",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).; 60th DAE Solid State Physics Symposium 2015 ; Conference date: 21-12-2015 Through 25-12-2015",

year = "2016",

month = may,

day = "23",

doi = "10.1063/1.4948066",

language = "אנגלית",

series = "AIP Conference Proceedings",

publisher = "American Institute of Physics Inc.",

editor = "R. Chitra and Shovit Bhattacharya and Sahoo, {N. K.}",

booktitle = "DAE Solid State Physics Symposium 2015",

}

Amaladass, EP, Sharma, S, Devidas, TR & Mani, A 2016, Linear magneto-resistance in Bi₂SeTe₂ topological insulator. in R Chitra, S Bhattacharya & NK Sahoo (eds), DAE Solid State Physics Symposium 2015., 110045, AIP Conference Proceedings, vol. 1731, American Institute of Physics Inc., 60th DAE Solid State Physics Symposium 2015, Noida, Uttar Pradesh, India, 21/12/15. https://doi.org/10.1063/1.4948066

Linear magneto-resistance in Bi₂SeTe₂ topological insulator. / Amaladass, E. P.; Sharma, Shilpam; Devidas, T. R. et al.
DAE Solid State Physics Symposium 2015. ed. / R. Chitra; Shovit Bhattacharya; N. K. Sahoo. American Institute of Physics Inc., 2016. 110045 (AIP Conference Proceedings; Vol. 1731).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Linear magneto-resistance in Bi2SeTe2 topological insulator

AU - Amaladass, E. P.

AU - Sharma, Shilpam

AU - Devidas, T. R.

AU - Mani, Awadhesh

PY - 2016/5/23

Y1 - 2016/5/23

N2 - Magnetic field and temperature dependent electronic transport measurements have been carried out on Bi2SeTe2 topological insulator single crystals. The measurements reveal an insulating behavior and the carriers were found to be electrons (n-type) from Hall measurement. Magneto-resistance (MR) measurements in the field range (B) of 15 T to -15 T carried out at 4.2 K showed a cusp like weak anti-localization behavior for lower fields (-5T 5T. Upon increasing temperature, MR transforms to linear dependence of B at 40, 50 and 100 K. On further increasing temperatures (> 200K), a parabolic MR is observed. Temperature dependent Hall data also showed a transition from a nonlinear to linear behavior upon increasing temperatures. Disorder induced changes in the electronic transport characteristics of bulk and surface electrons are believed to cause such changes in the magneto-transport behavior of this system.

AB - Magnetic field and temperature dependent electronic transport measurements have been carried out on Bi2SeTe2 topological insulator single crystals. The measurements reveal an insulating behavior and the carriers were found to be electrons (n-type) from Hall measurement. Magneto-resistance (MR) measurements in the field range (B) of 15 T to -15 T carried out at 4.2 K showed a cusp like weak anti-localization behavior for lower fields (-5T 5T. Upon increasing temperature, MR transforms to linear dependence of B at 40, 50 and 100 K. On further increasing temperatures (> 200K), a parabolic MR is observed. Temperature dependent Hall data also showed a transition from a nonlinear to linear behavior upon increasing temperatures. Disorder induced changes in the electronic transport characteristics of bulk and surface electrons are believed to cause such changes in the magneto-transport behavior of this system.

KW - Disorders

KW - Linear-Magneto resistance

KW - Magneto-resistance

KW - Topological insulator

UR - http://www.scopus.com/inward/record.url?scp=84984555339&partnerID=8YFLogxK

U2 - 10.1063/1.4948066

DO - 10.1063/1.4948066

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:84984555339

T3 - AIP Conference Proceedings

BT - DAE Solid State Physics Symposium 2015

A2 - Chitra, R.

A2 - Bhattacharya, Shovit

A2 - Sahoo, N. K.

PB - American Institute of Physics Inc.

T2 - 60th DAE Solid State Physics Symposium 2015

Y2 - 21 December 2015 through 25 December 2015

ER -