Abstract
The vacuum decoration method was used in combination with electron-microscopic examination to reveal concentration inhomogeneities manifested by impurity layers. The investigation was carried out on crystals with a deliberately induced layer semiconductor structure based on gallium arsenide. Decoration of the (110) sections of such structures made visible the individual layers and made it possible to determine their period and degree of geometric perfection. The substrate of the periodic semiconductor structure was also investigated by the vacuum decoration method. The results obtained for crystals with superlattices were used in the interpretation of the decoration patterns of gallium arsenide and yttrium aluminum garnet crystals grown from the melt in which the deliberately introduced and accidental impurities were distributed in layers. The effectiveness of the decoration method in studies of the structure of crystals with periodic impurity distributions is demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 1094-1097 |
| Number of pages | 4 |
| Journal | Physics of the Solid State |
| Volume | 18 |
| Issue number | 7 |
| State | Published - 1976 |