Lateral solid phase crystallization of amorphous silicon under high pressure

Seung Mahn Lee; Rajiv K. Singh

doi:10.1557/proc-557-219

Lateral solid phase crystallization of amorphous silicon under high pressure

Seung Mahn Lee, Rajiv K. Singh

University of Florida

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have investigated a novel surface-seeded crystallization technique at low processing temperatures (≤ 550°C) and high pressures (10MPa-25MPa) using polished polycrystalline diamond seeds. By controlling the high pressure, the nucleation and growth of silicon can be controlled to obtain improved quality silicon films on amorphous substrates at low temperatures. Depending on the annealing temperature and applied pressure, the orientation of crystallized silicon thin films varies as seen by x-ray diffraction and transmission electron microscopy results. In addition, crystallization of amorphous silicon thin films has effect on their roughness.

Original language	English
Pages (from-to)	219-223
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	557
DOIs	https://doi.org/10.1557/proc-557-219
State	Published - 1999
Externally published	Yes
Event	The 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices' - San Francisco, CA, USA Duration: 5 Apr 1999 → 9 Apr 1999

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Y2 - 5 April 1999 through 9 April 1999

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Lateral solid phase crystallization of amorphous silicon under high pressure

Abstract

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