Lateral solid phase crystallization of amorphous silicon under high pressure

Seung Mahn Lee, Rajiv K. Singh

Research output: Contribution to journalConference articlepeer-review


We have investigated a novel surface-seeded crystallization technique at low processing temperatures (≤ 550°C) and high pressures (10MPa-25MPa) using polished polycrystalline diamond seeds. By controlling the high pressure, the nucleation and growth of silicon can be controlled to obtain improved quality silicon films on amorphous substrates at low temperatures. Depending on the annealing temperature and applied pressure, the orientation of crystallized silicon thin films varies as seen by x-ray diffraction and transmission electron microscopy results. In addition, crystallization of amorphous silicon thin films has effect on their roughness.

Original languageEnglish
Pages (from-to)219-223
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1999
Externally publishedYes
EventThe 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices' - San Francisco, CA, USA
Duration: 5 Apr 19999 Apr 1999


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