Laser‐Assisted Photoelectrochemical Etching of n‐type Beta‐SiC

J. Shor; X. G. Zhang; R. M. Osgood

Laser‐Assisted Photoelectrochemical Etching of n‐type Beta‐SiC

J. Shor, X. G. Zhang, R. M. Osgood

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper a nonthermal photoelectrochemical etching technique for Formula is reported. The measured etch rates of 1–100 μm/min in this process are much faster than other etching methods currently available for this material. UV radiation is necessary for efficient photogeneration of holes near the surface. These holes are transported in the presence of an external bias to the semiconductor/liquid interface, where dissolution occurs through the anodic oxidation of the Formula and the removal of the oxide by F− ions present in the electrolyte. The electrochemistry of Formula and the etching process variables are discussed.

Original language	American English
Title of host publication	State of the Art Program on Compound Semiconductors
State	Published - 1990

Bibliographical note

Place of conference:USA

Cite this

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title = "Laser‐Assisted Photoelectrochemical Etching of n‐type Beta‐SiC",

abstract = "In this paper a nonthermal photoelectrochemical etching technique for Formula is reported. The measured etch rates of 1–100 μm/min in this process are much faster than other etching methods currently available for this material. UV radiation is necessary for efficient photogeneration of holes near the surface. These holes are transported in the presence of an external bias to the semiconductor/liquid interface, where dissolution occurs through the anodic oxidation of the Formula and the removal of the oxide by F− ions present in the electrolyte. The electrochemistry of Formula and the etching process variables are discussed.",

author = "J. Shor and Zhang, {X. G.} and Osgood, {R. M.}",

note = "Place of conference:USA",

year = "1990",

language = "American English",

booktitle = "State of the Art Program on Compound Semiconductors",

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T1 - Laser‐Assisted Photoelectrochemical Etching of n‐type Beta‐SiC

AU - Shor, J.

AU - Zhang, X. G.

AU - Osgood, R. M.

N1 - Place of conference:USA

PY - 1990

Y1 - 1990

N2 - In this paper a nonthermal photoelectrochemical etching technique for Formula is reported. The measured etch rates of 1–100 μm/min in this process are much faster than other etching methods currently available for this material. UV radiation is necessary for efficient photogeneration of holes near the surface. These holes are transported in the presence of an external bias to the semiconductor/liquid interface, where dissolution occurs through the anodic oxidation of the Formula and the removal of the oxide by F− ions present in the electrolyte. The electrochemistry of Formula and the etching process variables are discussed.

AB - In this paper a nonthermal photoelectrochemical etching technique for Formula is reported. The measured etch rates of 1–100 μm/min in this process are much faster than other etching methods currently available for this material. UV radiation is necessary for efficient photogeneration of holes near the surface. These holes are transported in the presence of an external bias to the semiconductor/liquid interface, where dissolution occurs through the anodic oxidation of the Formula and the removal of the oxide by F− ions present in the electrolyte. The electrochemistry of Formula and the etching process variables are discussed.

UR - https://scholar.google.co.il/scholar?q=Photoelectrochemical+Etching+of+beta-SiC&btnG=&hl=en&as_sdt=0%2C5

M3 - Conference contribution

BT - State of the Art Program on Compound Semiconductors

ER -

Laser‐Assisted Photoelectrochemical Etching of n‐type Beta‐SiC

Abstract

Bibliographical note

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