Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device

Huading Song; Zitong Zhang; Dong Pan; Donghao Liu; Zhaoyu Wang; Zhan Cao; Lei Liu; Lianjun Wen; Dunyuan Liao; Ran Zhuo; Dong E. Liu; Runan Shang; Jianhua Zhao; Hao Zhang

doi:10.1103/PhysRevResearch.4.033235

Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device

Huading Song, Zitong Zhang, Dong Pan, Donghao Liu, Zhaoyu Wang, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Dong E. Liu, Runan Shang, Jianhua Zhao, Hao Zhang

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband regime. The four-terminal device design excludes electrode contact resistance, an unknown value, which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero bias peaks (ZBPs) in differential conductance on the order of 2e2/h. At specific gate voltage settings, we find a magnetic-field-driven transition between a zero bias peak and a zero bias dip while the zero-bias conductance sticks close to 2e2/h. We discuss a topologically trivial interpretation involving disorder, smooth potential variation and quasi-Majorana zero modes.

Original language	English
Article number	033235
Journal	Physical Review Research
Volume	4
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevResearch.4.033235
State	Published - Jul 2022
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2022 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Funding

We thank L. Kouwenhoven, S. Das Sarma, and Ö. Gül for valuable comments and a critical reading of the manuscript. This work is supported by Tsinghua University Initiative Scientific Research Program, National Natural Science Foundation of China (Grants No. 92065106, No. 12004040, No. 61974138, and No. 12104053), Beijing Natural Science Foundation (Grant No. 1192017) and Alibaba Innovative Research Program. H.S. acknowledges China Postdoctoral Science Foundation (Grants No. 2020M670173 and No. 2020T130058), D.P. acknowledges the support from Youth Innovation Promotion Association, Chinese Academy of Sciences (Grants No. 2017156 and No. Y2021043).

Funders	Funder number
National Natural Science Foundation of China	12104053, 92065106, 12004040, 61974138
Chinese Academy of Sciences	2017156, Y2021043
China Postdoctoral Science Foundation	2020M670173, 2020T130058
Tsinghua University
Natural Science Foundation of Beijing Municipality	1192017
Youth Innovation Promotion Association

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title = "Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device",

abstract = "We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband regime. The four-terminal device design excludes electrode contact resistance, an unknown value, which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero bias peaks (ZBPs) in differential conductance on the order of 2e2/h. At specific gate voltage settings, we find a magnetic-field-driven transition between a zero bias peak and a zero bias dip while the zero-bias conductance sticks close to 2e2/h. We discuss a topologically trivial interpretation involving disorder, smooth potential variation and quasi-Majorana zero modes.",

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AU - Zhang, Zitong

AU - Pan, Dong

AU - Liu, Donghao

AU - Wang, Zhaoyu

AU - Cao, Zhan

AU - Liu, Lei

AU - Wen, Lianjun

AU - Liao, Dunyuan

AU - Zhuo, Ran

AU - Liu, Dong E.

AU - Shang, Runan

AU - Zhao, Jianhua

AU - Zhang, Hao

N1 - Publisher Copyright: © 2022 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

PY - 2022/7

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N2 - We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband regime. The four-terminal device design excludes electrode contact resistance, an unknown value, which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero bias peaks (ZBPs) in differential conductance on the order of 2e2/h. At specific gate voltage settings, we find a magnetic-field-driven transition between a zero bias peak and a zero bias dip while the zero-bias conductance sticks close to 2e2/h. We discuss a topologically trivial interpretation involving disorder, smooth potential variation and quasi-Majorana zero modes.

AB - We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband regime. The four-terminal device design excludes electrode contact resistance, an unknown value, which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero bias peaks (ZBPs) in differential conductance on the order of 2e2/h. At specific gate voltage settings, we find a magnetic-field-driven transition between a zero bias peak and a zero bias dip while the zero-bias conductance sticks close to 2e2/h. We discuss a topologically trivial interpretation involving disorder, smooth potential variation and quasi-Majorana zero modes.

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Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device

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