Abstract
In this study, we report the fabrication and characterization of a large-area semi-insulating (S.I.) GaAs α-particle detector optimized for low-voltage operation. The detector features a one-inch diameter and an active layer ~60 μm thick, achieving a charge collection efficiency (CCE) of 44% at 40V bias. The fabrication of a large-area GaAs detector with such a thin active layer is technically challenging and is described in detail in this work.
| Original language | English |
|---|---|
| Journal | IEEE Transactions on Nuclear Science |
| DOIs | |
| State | Accepted/In press - 2026 |
Bibliographical note
Publisher Copyright:© 1963-2012 IEEE.
Keywords
- Alpha
- GaAs
- Particle Detector
- Schottky
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